国家/地区 美国（62）
IPC部 C（62） H（38） B（34）
G（10） A（4）
IPC大类 C01（62）
IPC小类 C01B（62）
IPC C01B032/182（62）
发明人 BYUN K（3） KIM C（3） LEE C（3）
LEE E（3） SHIN H（3） BEDWORTH P V（2）
BYUN K E（2） CHO K（2） HEISE S E（2）
HOWE W R（2） HUNT J H（2） IFUKU R（2）
JIN C（2） JOUVRAY A（2） KIM S（2）
公开年 2015（15） 2017（12） 2018（8） 2021（7） 2013（6） 2016（5） 2020（4） 2022（3）
申请年 2014（10）  2015（10）  2017（10）  2016（6）  2012（4）  2018（4）  2019（4）  2021（4）  2013（3）  2020（3）  2022（2） 
专利权人 SAMSUNG ELEC.（4） CORNING INC（3） AIXTRON SE（2） BOEING CO（2）
CEALTECH AS（2） GUARDIAN GLA.（2） GUARDIAN IND.（2） LOCKHEED MAR.（2）
SHANGHAI INS.（2） TOKYO ELECTR.（2） UNIV CALIFOR.（2） UNIV SEOUL N.（2）
UNIV SINGAPO.（2）

Battery-powered analyte sensing system used in Three-dimensional (3D) printing techniques, comprises printed battery comprising anode, comprises non-toxic biocompatible metal, first carbon-based current collector in electrical contact with anode and 3D hierarchical mesoporous carbon-based cathode.

CHMIOLA J, SINGH S, LIM S H, COOK D, MONTALVO C, STOWELL M W, LANNING B

Repairing layers of laminate stack or printed circuit board, comprises providing layered structure, identifying fault location in outer graphene layer, preparing surface of outer graphene layer, and applying localized heat on fault location.

MENTOVICH E, ATIAS B, NAVEH D, LEVI A, SMOLINSKY E Z B

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Continuously or semi-continuously producing graphene by introducing particles comprising core into stationary deposition chamber and subjecting to plasma enhanced chemical vapor deposition using carbon-containing gas to form solid graphene.

BEUKES J A, HUANG F

Method for manufacturing graphene-coated steel sheet, involves modifying steel sheet to have negative charge and forming of first graphene oxide layer is performed using graphene oxide dispersion modified with amine group.

YOO H, KIM J, BAEK J, BYEON C, YOO H J, SU K J, BAEK J H, BYEON C S, BAI J, LIU H

Composite powder useful for powder metallurgy and additive manufacturing processes, comprises particles with a core of an iron based material and a coating of a graphene based material.

JANSSON U, TIDEN S, TAHER M, DIAZ L, REMONEN T, JANSSEN U

Producing polymer-coated graphene layer structure involves e.g. adding substrate to reaction chamber, supplying flow comprising precursor compound to form graphene layer structure, heating and spin-coating using polymer or polymer precursor.

GLASS H, GUINEY I, TYLER M, WALLIS R, THOMAS S, TAYLOR M