国家/地区 中国（16） 美国（5） 欧洲专利局（EPO）（3） 日本（3） 台湾（3） 韩国（2）
IPC部 C（19） B（10） H（8）
G（2）
IPC大类 C01（19）
IPC小类 C01B（19）
IPC C01B032/184（19）
发明人 CHEN J（2） CHU K（2） HUANG D（2）
LI X（2） LI Y（2） LIN R（2）
LIU P（2） WANG F（2）
公开年 2018（19）
申请年 2017（10）  2018（7）  2016（2） 
专利权人 CHENZHOU BOT.（2） UNIV LANZHOU.（2） UNIV XIAN TE.（2）

Synthesis of electric wire involves adding methyl viologen, graphene oxide and silver nitrate to ethanol solution and then mixing, stirring mixture and then heating, pressing mixture and hot extruding.

WANG L

Preparation of three-dimensional graphene/copper composite material involves weighing graphene oxide dispersion liquid, placing in PTFE mold and freeze-drying, placing alloy in graphene foam and performing pressureless infiltration.

CHU K, WANG F, WEI X, GENG Z, HUANG D, LI Y

Preparing graphene/metal composite material useful for high speed train insulated gate bipolar transistor packaging comprises e.g. preparing graphene oxide dispersion, coating layer of metal boron and titanium on surface of graphene film.

CHU K, WANG F, HUANG D, LI Y

Method for producing graphene, involves placing substrate in vacuum chamber, and heating graphite to sublimation under vacuum and depositing graphite on substrate after sublimation.

WANG W

Preparation of anatase-type flower-shaped diamond titanium dioxide/graphene composite material for photocathode, involves stirring titanium tetrachloride solution and graphene oxide dispersion liquid, heating, cooling, washing and drying.

YAO C, WANG P, ZUO S, LIU W, LI X

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M

High temperature resistant graphene heat dissipating film comprises graphene heat dissipating layer and high temperature resistant nano protective layer on both sides of the graphene heat dissipating layer.

GAO C, LIU Y

Preparation of graphene involves forming metal catalyst film on surface of amorphous carbon film, vacuumizing, placing sample of silicon/amorphous carbon/metal catalyst, heat-preserving and air-cooling.

WANG A, LIU P, ZHANG D, GUO T, LI H, KE P

Preparing graphene surface-coated metal copper or nickel comprises e.g. pre-processing and processing the graphite oxide, and placing the graphite oxide after processing ultrasonic treatment to obtain oxidized graphene.

CHEN W, WANG J, CUI P, ZUO Y