国家/地区 日本（21）
IPC部 C（21）
IPC大类 C01（21）
IPC小类 C01B（21）
IPC C01B032/184（21）
发明人 IFUKU R（2） MATSUMOTO T（2） YAMAGUCHI J（2）
公开年 2016（3） 2017（3） 2018（3） 2011（2） 2013（2） 2021（2）
申请年 2015（5）  2017（3）  2010（2）  2011（2）  2013（2）  2019（2） 
专利权人 FUJITSU LTD（3） TOKYO ELECTR.（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Carbon film comprises first layer containing flat graphene, and second layer formed on the first layer containing arc-shaped graphene.

OOTA R, NAKANISHI K, OZAWA Y

Graphene quantum dot apparatus for e.g., photoelectric conversion device, has substrate and graphene quantum dots on substrate, with each quantum dot having armchair-type first edge parallel to first direction and armchair-type second edge.

YAMAGUCHI J

Graphene nanoribbon precursor for use in graphene nanoribbon that is utilized in electronic device for channel of FET and resonant tunneling diode, comprises substituted terphenyl compound.

YAMAGUCHI J

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Continuous method for preparing film comprising graphene, involves advancing metal substrate having graphene-comprising layer out of processing chamber, and separating graphene-comprising layer to form film comprising graphene.

HARUTYUNYAN A, HARUTYUJAN A

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z