国家/地区 中国（14） 美国（4） 日本（3） 世界知识产权组织（2）
IPC部 C（16）
IPC大类 C01（16） C23（6） C30（3）
B01（2） B82（2） C09（2）
IPC小类 C01B（16）
IPC C01B032/186（16）
发明人 WANG H（16）
公开年 2018（3） 2016（2） 2017（2） 2021（2）
申请年 2018（3）  2021（3）  2015（2）  2017（2） 
专利权人 SHANGHAI INS.（6） DEHUA LIXIN .（2）

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Preparation of hexagonal boron nitride surface torsion double-graphite alkene involves introducing reaction gas and catalytic gas into chemical vapor growth chamber at second preset temperature.

WANG W, XIAO X, JIANG C, WANG H

Graphene/copper/micron particle composite material useful in e.g. graphene high-temperature heating ink for high-temperature heating bodies for electronic cigarette lighters, kettles, bakeware, heaters and electric ceramic stove, comprises micron particles, copper element and graphene.

LI N, WANG H, SONG Q, JIANG B

Preparing graphene by etching chemical vapor deposition method by cutting copper foil, and using plasma cleaner to treat surface of copper foil, placing into ultrasonic cleaning machine, performing spin-coating, washing with deionized water, transferring to flexible substrate and drying.

TONG K, WANG T, CHEN J, QIAN K, WANG H, ZHANG Q

Manufacturing graphene electrode, comprises e.g. forming carbon source on substrate, forming photoresist layer on carbon source, exposing photoresist layer with mask, developing photoresist layer after exposure and forming metal layer.

WANG H

Preparing graphene covering hollow glass microbead particles by reacting microbeads in furnace, introducing argon and hydrogen, initiating graphene growth process, introducing methane gas and growing graphene on microbead surface.

WANG Y, WANG H, PENG X, LI J, SHI Y

Graphene production device comprises casing, recovery mechanism, two air inlets, two air outlets and two bearing housing, where recovery mechanism is disposed on outer casing.

WANG H

Processing growth of graphene by chemical vapor deposition on an insulating substrate by using solid carbon source comprises solid uniformly paving carbon source powder on the surface of the insulating substrate, and growing.

HOU S, YUAN Y, WANG H, ZHENG Y, LIU L, ZHANG J

Chemical vapor deposition device useful for batch preparation of graphene, comprises a furnace body, a furnace cover, an air inlet pipe, an air outlet pipe and a controller and the furnace cover arranged above the furnace body.

WANG H

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X