国家/地区 中国（10） 美国（9） 世界知识产权组织（7） 欧洲专利局（EPO）（5） 韩国（5） 日本（2）
IPC部 B（15）
IPC大类 B82（15）
IPC小类 B82Y（15）
IPC C01B032/186（15）
发明人 CHO K（2） KIM S（2） LEE E（2）
公开年 2016（8） 2015（6）
申请年 2015（15）
专利权人

Microporous-mesoporous-macroporous multistage structure of three-dimensional graphene material used for producing supercapacitor devices, has specific surface area and electrical conductivity, and is macroscopically bulk material.

HUANG F, BI H

Low temperature plasma-based process for preparing substrate coated with graphene-containing thin film, involves plasma-depositing film onto substrate via vapor deposition process, and subjecting layered substrate to laser treatment.

CAFFIO M, MARQUORDT C, ARVIDSEN J H, HAUPT R A B

Forming a graphene device, used to form sensor device, comprises forming a graphene film over a substrate, depositing a polymer material covering a surface of the film, by gas phase deposition, and removing the substrate from the film.

KALITA D, BOUCHIAT V, MARTY L, BENDIAB N

Apparatus for manufacturing cell sheet, has graphene layer that is formed adjacently in electrode, and patterned electrode that is formed adjacently in support layer.

KIM D, CHOI S, HYEON T, KIM S, CHO H, CHO K, HONG C S, HWAN H T, HYEONG K D, JU K S, RIM C H, WON C G

Hierarchical composite structure used as electrode and in electrochemical-energy-storage device, comprises open-cell graphene foam or graphene-like foam filled with preset amount of conductive nanoporous spongy structure.

PEDROS J, BOSCA A, MARTINEZ J, CALLE F, RUIZGOMEZ S, PEREZ L, BARRANCO V, PAEZ DUENAS A, SAN LUIS J G, GARCIA SAN LUIS J, RUIZ G S, PAEZ D A, GARCIA S L J, PEDRA S J, MARTANEZ J, RUIZGA M S, GARCAA S L J

Growth of graphene involves decomposing carbon atoms in tungsten carbide source by reduction reaction using ethanol/methanol solution as carbon source, generating tungsten carbide, and depositing carbon matrix on tungsten carbide.

HU Y, WU G, WU Z, YIN Y, ZHAO M

Preparing spherical shell-shaped three-dimensional graphene comprises e.g. uniformly mixing copper(ii) sulfate and nickel(ii) sulfate, washing, heating under vacuum, carrying out reduction treatment and graphene deposition process.

GUO X, JIANG J, ZENG Y, ZHANG X, HE M, CHEN J, GE C, LI C

Manufacturing graphene structure involves providing gas including semiconductor material and gas including carbon into reaction chamber, and performing chemical vapor deposition to form core of semiconductor material and shell of graphene.

LEE E, CHOI B, LEE J, WHANG D

Manufacture of graphene used in manufacture of electric device, involves contacting hydrogen gas with metal catalyst, contacting metal catalyst with hydrocarbon gas, nitrogen gas, or inert gas, and forming graphene on metal catalyst.

CHO K W, LEE H C, LEE E H, CHO K, LEE E, LEE H, LI E

Graphene structure for electronic component e.g. transistor, comprises two-dimensional base graphene layer having defect, and linking material formed at defect of base graphene layer.

SUNG M, KIM S, MO S M, KIM S J, CHENG M