国家/地区 中国（31）
IPC部 C（31）
IPC大类 C01（31） H01（31） B82（14）
C07（7） C08（7） H05（6）
B32（5） B05（4） C23（4）
G01（3） B01（2） C09（2）
C25（2）
IPC小类 C01B（31）
IPC H01L051/00（31）
发明人 LEE J（5） MUELLEN K（4） FENG X（3）
KIM H（3） LEE J H（3） MULLEN K（3）
SCHWAB M G（3） CHOI S H（2） CHUNG H（2）
CHUNG H J（2） FASEL R（2） HAYASHI K（2）
KIM S（2） KIM W（2） LEE Y（2）
公开年 2012（6） 2015（6） 2016（6） 2013（4） 2014（4） 2017（3）
申请年 2015（7）  2012（6）  2016（5）  2014（4）  2011（3）  2013（3）  2010（2） 
专利权人 BASF SE（4） MAX PLANCK G.（4） SAMSUNG ELEC.（4） BASF CHINA C.（3）
POSTECH ACAD.（2） UNIV SEOUL N.（2） UNIV SEOUL N.（2）

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Semiconductor device, has resin material that is provided for covering semiconductor chip which is coupled onto substrate through bump electrode and that is provided for containing resin and graphene particles.

MATSUBARA Y, YOSHIHISA M

Method for forming e.g. drain contacts for e.g. graphene FET, involves forming grown-in graphitic interface layer at interface between source and graphene surface source contacts and drain contact and graphene surface drain contact.

COLOMBO L, VENUGOPAL A

Perovskite-based solar cell used for optoelectronic device, consists of graphene layer as conductive transparent electrode.

CHOI M S, SUNG H, AHN N, LEE J, JANG M S, SOO C M, KWON L J, SEOK J M, YOON J, CUI W, JANG M

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Graphene laminate used in electrode for electronic device chosen from e.g. organic thin-film transistor and organic solar cell, comprises graphene layer comprising electron-donating functional group, and another graphene layer.

CHO K, KIM H, KANG B S, GANG B, KANG B

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Method of forming graphene layer for producing graphene-containing device e.g. diode involves forming graphene on region of underlayer using source gas and forming another graphene on another region using another source gas.

KIM H, LEE J, JIN X, KIM H W, LEE J H

Method for forming nano-gaps in graphene used in e.g. electronic device, involves applying voltage across third region of single layer graphene such that nano-gap extending across the entire width of single layer graphene is formed.

BRIGGS G A D, MOL J A

Organic solar energy battery device, has electrode formed with foamy thin film, where donor material of photoactive layer is enriched at side of transport layer, and heterojunction structure formed by graphene and donor material.

LI H, XIA S, XIE F