国家/地区 日本（10）
IPC部 B（10）
IPC大类 C01（10） C23（10） B82（6）
B32（5） H01（5） H05（3）
B01（2）
IPC小类 C01B（10）
IPC C23C016/26（10）
发明人
公开年 2013（7） 2012（2）
申请年 2012（10）
专利权人

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Preparation of graphene paper involves introducing protective gas into reaction chamber having clean substrate, heating substrate, continuously introducing carbonaceous material and cooling to obtain graphene paper on substrate surface.

WANG Y, YUAN X, ZHOU M

Formation method for transparent conductive film, involves forming transparent conductive film comprising sheet-like graphene, by sintering coated graphene ink to base-material surface at predetermined temperature.

TAKEI H, SAKIO S, SATO M, HIRAOKA K, IKEDA S, SAKAO Y, OTAKE F

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T

Copper foil for manufacturing graphene, has specified arithmetic mean roughness in rolling parallel direction and rolling perpendicular direction.

CHIBA YOSHIHIRO, CHIBA Y, CHIBA G, YOSHIHIRO C

Conductive material useful in an electric device, comprises a carbon substance comprising a graphene (a single-layered graphene or a multilayered graphene), and a metallic substance mixed with and/or laminated to the carbon substance.

NAITO K, YOSHINAGA N, NAKANO Y, AKASAKA Y, MATAKE S, AKITA M, MATEKE S

Producing graphene used as electronic materials and electrode materials, comprises contacting a carbon source substance with surface of flexible film-forming target, and applying a current to film-forming target and heating the target.

KOBAYASHI T, BANDO M, KIMURA N, SHIMIZU K, KADONO K, SUMINO K

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H