国家/地区 美国（5） 中国（4） 世界知识产权组织（3） 日本（2） 韩国（2） 台湾（2）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C23C016/26（8）
发明人 BYUN K（2） KIM C（2） LEE C（2）
LEE E（2） LI Y（2） SHIN H（2）
公开年 2021（5） 2022（3）
申请年 2021（8）
专利权人 APPLIED MATE.（2） SAMSUNG ELEC.（2）

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Continuously or semi-continuously producing graphene by introducing particles comprising core into stationary deposition chamber and subjecting to plasma enhanced chemical vapor deposition using carbon-containing gas to form solid graphene.

BEUKES J A, HUANG F

Method for high-quality, rapid, large-area preparation of vertical graphene films, comprises e.g. passing rolled substrate through reaction chamber, turning on plasma, winding of rotating shaft to form vertical graphene and reacting.

WANG Z, LI Y, LIU M, LIU J

Vertical graphene composite heat conducting copper foil comprises copper foil substrate layer adhered with two plane graphene layers at surface and bottom, where surfaces of plane graphene layers have vertical graphene layers.

ZHANG L, YE Q, WANG X, SHEN L