国家/地区 中国（11） 美国（10） 世界知识产权组织（10） 欧洲专利局（EPO）（9） 日本（8） 韩国（7） 英国（2） 台湾（2）
IPC部 C（15）
IPC大类 C01（15）
IPC小类 C01B（15）
IPC C01B032/186（15）
发明人 CHEN L（2）
公开年 2015（15）
申请年 2014（8）  2015（4）  2013（3） 
专利权人 UNIV CALIFOR.（2）

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Apparatus for plasma synthesis of graphitic products including graphene, passes cracked carbon-containing species into reaction chamber, and recombining cracked carbon-containing species within afterglow.

PENNINGTON D A, CLAYTON A R, JUDA K L, PAUKNER C, KURZEPA L, COOPER R H S J, KOZIOL K K, JOAUG J Y, ST JOHN COOPER R H, ST JOHN C R H

Preparing graphene thin films comprises processing copper foil blank and growing graphene films on copper foil where processing copper foil blank includes e.g. cleaning copper foil blank plasma, decontaminating and treating with oxide layer.

JIN H, LIU Z, QI X, PENG P, YANG H, ZHANG Z, ZHANG W, ZHANG X, DENG K

High electrical and thermal conductivity flexible three-dimensional graphene material comprises multiple three-dimensional graphene tube, three-dimensional graphene cloth and three-dimensional graphene felt.

BI H, HUANG F, ZHANG Y, YU L

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Forming graphene film comprises placing substrate and carbon source into reaction chamber having gas inlet, and heating carbon source under flow of hydrocarbon-free gas to convert portion of carbon source into graphene film on the substrate.

DIJON J, TYURNINA A

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L