国家/地区 中国（100） 美国（15） 韩国（13） 世界知识产权组织（12） 日本（7） 欧洲专利局（EPO）（4）
IPC部 C（132）
IPC大类 C01（132） C23（35） H01（26）
G01（15） B01（8） B82（8）
C08（5） B32（4） B22（3）
C04（3） C03（2） C09（2）
G02（2） G03（2）
IPC小类 C01B（132）
IPC C01B032/186（132）
发明人 LI X（7） SHIN H（7） SHIN K（7）
BYUN K（6） BYUN K E（6） LI J（6）
SHIN H J（6） SHIN K W（6） ZHANG B（6）
GAO X（5） KIM C（5） LEE C（5）
LEE C S（5） LI C（5） SONG H（5）
公开年 2020（132）
申请年 2020（62）  2019（58）  2018（12） 
专利权人 SAMSUNG ELEC.（7） BEIJING GRAP.（5） UNIV TIANJIN.（4） SHAANXI XING.（3）
TOKYO ELECTR.（3） UNIV PEKING（3） UNIV TIANJIN（3） BEIJING GRAP.（2）
BEIJING TANR.（2） CHANGCHUN IN.（2） CHANGZHOU NU.（2） GRAHOPE NEW .（2）
GUANGDONG MO.（2） INST METAL R.（2） JIANGSU JIAN.（2） QINGDAO FEIC.（2）
SHANGHAI INS.（2） SIZU TECHNO .（2） UNIV NAT DEF.（2） UNIV SOUTHER.（2）

Preparing three-dimensional vertical graphene comprises using hydrogen and hydrocarbons as raw materials, oxygen as etching gas, and chemical vapor deposition.

WANG M, HAN J, MA Y, CHEN X, XIAO L, JIA S

Producing graphene/flexible substrate, comprises e.g. forming laminate in which flexible substrate, adhesive film, and graphene/metal catalyst substrate are sequentially stacked, laminating laminate, and removing metal catalyst.

JIN Y, JANG S, KA D, JUNG H S

Graphene preparation device comprises reaction shell with sealed containing cavity, heating component arranged in containing cavity, and reaction area formed in containing cavity, and reaction gas input pipe connected to reaction shell.

TAO T, CAO M

Substrate used for preparing high-quality graphene, is made of iron-cobalt-nickel-copper alloy, and has thickness and surface roughness below preset value.

CAO N, LIU P, ZANG X, CAI K, WANG G, LI G

Preparing graphene material useful in the field of air purification, water purification, medical field and field of clothing comprises heating arc under protective gas environment, and introducing reaction gas into reaction space.

CAO M, TAO T

Tubular graphene aerogel used in sensors, oil-water separation, heat preservation, and catalysis, comprises carbon tubes.

HE H, WANG D, CHEN W

Growing large area and few layers of nitrogen-doped graphene with small molecules, by placing raw materials by providing containing cavity and growth cavity, connecting, vacuuming, performing growth and performing post-processing.

WU Q

Graphene device comprises precursor graphene device and graphene layer in which precursor graphene device comprises insulator layer, metal layer in contact with and covering part of top of insulator layer and carbon layer.

BUSCH J, LINDAMOOD L

Immersion spray etching comprises covering side of graphene-grown substrate with graphene film that needs to be retained with protective film, adding to flowing etching solution to etch substrate to form protective film/graphene.

LI T, LIU H, MAO D, ZHANG J

Preparing high-conductivity graphene/copper composite wire, comprises electrochemically polishing copper wire, performing coil chemical vapor deposition, and doping using carbon source, reducing gas source and doping source.

LIU Y, YAO S, GUO C, FAN T