国家/地区 美国（202）
IPC部 C（202）
IPC大类 C01（202） C23（122） H01（111）
B82（80） B01（36） B32（31）
C30（27） G01（13） B05（12）
C25（12） C03（8） C09（8）
G03（8） H05（7） C04（6）
IPC小类 C01B（202）
IPC C01B032/186（202）
发明人 SHIN H（16） SHIN H J（14） SHIN K（14）
LEE C（13） SHIN K W（13） BYUN K（12）
LEE C S（12） BYUN K E（11） LEE E（11）
KIM C（10） CHO Y（7） CHO Y C（7）
SONG H（7） HONG B H（6） KIM S（6）
公开年 2017（28） 2021（25） 2015（24） 2022（20） 2016（19） 2018（16） 2020（15） 2014（14） 2012（11） 2023（11） 2013（10） 2011（4） 2019（3）
申请年 2014（22）  2015（22）  2016（22）  2021（22）  2017（20）  2020（20）  2022（18）  2013（15）  2012（12）  2018（9）  2019（9）  2011（7）  2010（3） 
专利权人 SAMSUNG ELEC.（24） SAMSUNG TECH.（7） HANWHA TECHW.（6） UNIV CALIFOR.（6）
CALIFORNIA I.（5） CORNING INC（5） INT BUSINESS.（5） PARAGRAF LTD（5）
UNIV IMAM AB.（5） UNIV SUNGKYU.（5） CENT ADVANCE.（4） SHANGHAI INS.（4）
TOKYO ELECTR.（4） UNIV SEOUL N.（4） UNIV SUNGKYU.（4） COMMISSARIAT.（3）
GRAPHENE SQU.（3） HANWHA AEROS.（3） IND TECHNOLO.（3） JX NIPPON MI.（3）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

System for forming graphene used in different types of commercial applications, e.g. batteries, comprises substrate holder designed for holding substrate sheet, outfeed tunnels provided adjacent to substrate holder, multiple processing sub-enclosures provided adjacent to outfeed tunnels.

SHERRILL V, BARAKET M, PHILPOTT R

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Semiconductor device comprises interconnection structure comprises seed layer disposed on first conductive layer, seed layer including graphene; and metal migration barrier layer disposed on seed layer, metal migration barrier layer including MXene.

HAN J H, KOO W T, HAN Z, KOO W, TAE K W

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Depositing graphene barrier film, involves placing substrate containing the titanium thin film layer into substrate processing system chamber forming processing space, supplying first reaction gas into chamber, supplying second reaction gas, and forming graphene layer on titanium thin film layer.

PARK J, LI J, JIN D, SUN W, KIM T, YIN Y, TIAN Z, BAK H, PARK J H, LEE K J, KIM D W, SUN W H, KIM T S, YOON W J, JEON J H, PARK H K, PARK H, JEONJINHO, YUN W J, WOO K D, LEE K

Transparent electrode for solar cell, comprises transparent substrate and composite layer disposed on transparent substrate, where composite layer comprises graphene layer and set of nanoparticles, where nanoparticles are embedded in graphene layer and extend through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A

Preparing solar cell involves heating substrate deposited with nanoparticles, forming composite layer with graphene layer, cooling, disposing transparent substrate having quartz, glass and polymers such as polymethylmethacrylate, polystyrene, fabricating electrode, forming cathode and electrolyte.

ELSAYED K A M, MAAROUF A A

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S