国家/地区 中国（22）
IPC部 C（22）
IPC大类 C01（22） C23（22） H01（7）
B01（3） B22（3） B32（2）
B82（2）
IPC小类 C01B（22）
IPC C23C016/26（22）
发明人 CHENG J（2） FAN L（2） HE H（2）
WANG X（2） WU Q（2） YANG J（2）
ZENG X（2）
公开年 2021（11） 2020（10）
申请年 2020（22）
专利权人 UNIV YANGZHO.（2）

Preparation method of copper-based graphene, involves removing copper-based graphene precursor from impurities by solvent separation method, and drying copper-based graphene precursor to form copper-based graphene finished product.

WU G, QIAN T, CAO H, MA Y, SHEN H

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Preparing nanorobot useful for tumor treatment, comprises e.g. placing paramagnetic metal target in sputtering chamber, and passing argon and oxygen into sputtering chamber, passing shielding gas into sputtering chamber, and curing.

Preparing graphene film useful in thin film transistor comprises preparing graded porous silica film filled with metal catalyst, depositing graphene on surface of graded porous silicon dioxide film and removing graded porous silica film.

XIA Y, ZHUO E, YU S

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Preparing graphene-reinforced alloy composite material comprises e.g. taking graphene oxide aqueous solution, preparing porous graphene colloid, melting the first part alloy to alloy solution, pouring to porous graphene colloid and crushing.

DU B, ZHU X, ZHU Y, LUO K