国家/地区 韩国（12） 美国（10） 世界知识产权组织（8） 中国（2） 日本（2）
IPC部 B（14）
IPC大类 B01（14）
IPC小类 B01J（14）
IPC C01B031/02（14）
发明人 HONG B H（2） KIM K H（2） LEE J（2）
公开年 2013（7） 2012（6）
申请年 2012（14）
专利权人 HANWHA TECHW.（4） SAMSUNG TECH.（4） HANWHA AEROS.（3） UNIV SUNGKYU.（3）
SAMSUNG ELEC.（2） SRC CORP（2） UNIV SUNGKYU.（2）

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Graphene dot structure to form network, useful to form electrode or conductive layer in lithium ion battery or hydrogen storage apparatus comprises core of semiconductor material, and shell of graphene formed on surface of core.

LEE E, CHOI B, LEE J, WHANG D, CHOI B L, LEE E K, LEE J H, WHANG D M

Manufacturing a metal wire, comprises forming graphene in a polymer layer surface and then irradiating, and coating a carbon source polymer on a metal wire or the board by spin coating, dip-coating or spray coating.

KIM S M, YUN K S, JUN S W, YUN K

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T

Producing graphene, comprises forming structures on surface of face-centered cubic metal catalyst substrate having specified orientation, and supplying hydrocarbon to substrate.

KIM K H, MAENG K S, PARK C W, CHA S W, HONG S Y, HONG B H, JUNG M H, KIM K E, PARK S B, BEOM P S, EUN K G, HUI H B, HUI J M, HYEONG K G, SEOP M G, U P C, WON C S, YEON H S

Manufacture of graphene for, e.g. organic LEDs, involves preparing structure with graphene on surfaces and catalyst, arranging carriers on graphene, and removing catalyst while winding up carriers by rotating rolls facing each other.

KIM N, RYU J, YEONG K N, CHEOL R J, KIM N Y, RYU J C

Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.

FISHER T S, KUMAR A

Cyclic type graphene manufacturing device has deposition chamber and receiving chamber whose walls are arranged adjacent to each other.

KIM K H

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M