国家/地区 美国（260）
IPC部 C（260）
IPC大类 C01（260）
IPC小类 C01B（260）
IPC C23C016/26（260）
发明人 SHIN H（16） HONG B H（13） SHIN H J（13）
LEE C（12） LEE C S（12） LEE E（11）
BYUN K（10） BYUN K E（9） CHOI J（9）
LEE J（9） SHIN K（9） SHIN K W（8）
AHN J（7） FAN S（7） HONG B（7）
公开年 2013（38） 2012（35） 2016（26） 2017（25） 2015（24） 2014（23） 2021（21） 2011（14） 2018（11） 2022（11） 2023（10） 2020（9） 2019（5） 2009（4） 2010（3）
申请年 2012（37）  2013（33）  2011（27）  2016（27）  2014（23）  2015（22）  2021（17）  2022（14）  2017（13）  2020（12）  2010（11）  2018（8）  2019（8）  2009（4）  2008（3） 
专利权人 SAMSUNG ELEC.（27） HANWHA TECHW.（8） SAMSUNG TECH.（8） TOKYO ELECTR.（8）
UNIV SUNGKYU.（8） UNIV SUNGKYU.（8） GRAPHENE SQU.（7） HON HAI PREC.（7）
HONGFUJIN PR.（7） KOREA INST S.（7） UNIV CALIFOR.（7） UNIV SUNGKYU.（7）
UNIV TSINGHU.（7） APPLIED MATE.（6） CORNING INC（6） CALIFORNIA I.（5）
UNIV IMAM AB.（5） UNIV SEOUL N.（5） CENT NAT REC.（4） COMMISSARIAT.（4）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Manufacturing electrostatic self-assembled silicon/reduced graphene oxide (rGO)/carbon nanofibers composite as anode materials for lithium-ion battery, involves obtaining silicon (Si)-(3-aminopropyl)triethoxysilane (APTES) solution by adding predetermined silicon nanoparticles to piranha solution.

CONG R, LEE C S, LEECHANGSUP, FEMALE T

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Depositing graphene barrier film, involves placing substrate containing the titanium thin film layer into substrate processing system chamber forming processing space, supplying first reaction gas into chamber, supplying second reaction gas, and forming graphene layer on titanium thin film layer.

PARK J, LI J, JIN D, SUN W, KIM T, YIN Y, TIAN Z, BAK H, PARK J H, LEE K J, KIM D W, SUN W H, KIM T S, YOON W J, JEON J H, PARK H K, PARK H, JEONJINHO, YUN W J, WOO K D, LEE K

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Producing coated nano-ordered carbon particles used in anode within rechargeable battery including sodium-ion batteries and other metal-ion batteries, involve exposing carbon-containing material to expanding agent to produce expanded carbonaceous particles during expanding process.

ENTERKIN J A, WORFOLK B J, ZHANG L

Transparent electrode for solar cell, comprises transparent substrate and composite layer disposed on transparent substrate, where composite layer comprises graphene layer and set of nanoparticles, where nanoparticles are embedded in graphene layer and extend through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A

Preparing solar cell involves heating substrate deposited with nanoparticles, forming composite layer with graphene layer, cooling, disposing transparent substrate having quartz, glass and polymers such as polymethylmethacrylate, polystyrene, fabricating electrode, forming cathode and electrolyte.

ELSAYED K A M, MAAROUF A A

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S