国家/地区 中国（19）
IPC部 C（19）
IPC大类 C01（19） C23（19） H01（4）
B22（2） B82（2）
IPC小类 C01B（19）
IPC C23C016/26（19）
发明人 CHENG J（2） FAN L（2） HE H（2）
LI C（2） LI X（2） YANG J（2）
ZENG X（2）
公开年 2020（19）
申请年 2020（10）  2019（8） 
专利权人 UNIV TIANJIN.（2） UNIV YANGZHO.（2）

Preparing high-conductivity graphene/copper composite wire, comprises electrochemically polishing copper wire, performing coil chemical vapor deposition, and doping using carbon source, reducing gas source and doping source.

LIU Y, YAO S, GUO C, FAN T

Device used for producing graphene includes main heating unit, auxiliary heating unit, air supply unit, pressure reducing component, bottom plate, containing space, heating space and cavity body.

ZHANG J

Quartz bracket for use in quartz heating device of graphene production system, has two rolling rings which supports and transports copper foil on which graphite is to be grown, and supports and rolling rings are made of quartz material.

LI X, ZHANG B, LI J, WANG X, YU G

Growing vertical graphene film comprises preparing substrate and depositing graphene film on substrate by hot filament chemical vapor deposition (CVD) method.

LI M, YANG Z, LI H, LI C, YANG B

Preparing silver triangular ring nanoparticle array/single layer graphene film composite material comprises e.g. CVD growing of single-layer graphene film on copper foil; preparing single-layer PS ball colloidal film on glass slide;.

HE H, CHENG J, FAN L, YANG J, ZENG X

Preparing silver triangular nanoparticle array/single layer graphene film composite material by transferring single-layer polystyrene ball colloidal film to copper foil on which graphene film is grown, and then depositing silver on foil.

HE H, CHENG J, FAN L, YANG J, ZENG X

Preparing nanoporous graphene material involves preparing nano-porous nickel foam by pickling foamed nickel substrate, removing surface oxide film, then rinsing with deionized water to neutrality and drying for later use.

XU H

Fast chemical vapor deposition growth of single-layer graphene on non-metallic substrates comprises e.g. raising non-metallic substrate to growth temperature in non-oxidizing atmosphere, and charging reaction system with carbon source.

MA L, WEI S, REN W, CHENG H

Growing large area and few layers of graphene with small molecules comprises e.g. providing containing cavity and growth cavity, placing growth material in containing cavity and connecting containing chamber with protective gas.

WU Q

Synthesizing single-layer graphene on surface of single crystal iron for preparing spin device, involves placing single crystal iron, iron sample with clean surface in vacuum environment containing hydrocarbon gas.

HONG Z, LI R, YOU L