国家/地区 美国（11）
IPC部 C（11）
IPC大类 C01（11） C23（11） H01（6）
B01（2） C30（2）
IPC小类 C01B（11）
IPC C23C016/26（11）
发明人 BYUN K（2） LEE C（2） LEE E（2）
LEE S（2） SHIN H（2） SHIN K（2）
SONG H（2）
公开年 2022（11）
申请年 2021（6）  2022（5） 
专利权人 APPLIED MATE.（2） SAMSUNG ELEC.（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Producing graphene useful for electronic devices comprises forming graphene on non-metallic surface of substrate by chemical vapor deposition in reaction chamber and adding precursor in gas phase and suspended in gas into reaction chamber.

DIXON S, GRIFFITHS J, GRIFFIN R M, GUINEY I, THOMAS S

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Making solar cell involves depositing multiple nanoparticles on surface of chemical vapor deposition substrate, heating substrate and nanoparticles at sub-atmospheric pressure, and contacting gaseous mixture comprising methane and hydrogen with nanoparticles.

ELSAYED K A M, MAAROUF A A

Manufacturing wrinkled graphene comprises immersing polymeric substrate, wrinkled graphene, polystyrene sulfonic acid, or polystyrene substrate in water to remove polystyrene substrate by dissolving polystyrene sulfonic acid substrate.

HONG S, NARUTE P, NARUTEPHRASANT

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C

Forming graphene film involves depositing carbon source onto substrate within deposition environment comprising vacuum to form graphene film on substrate, where carbon source comprises coal, coal component, or combination.

LAUMB J, TIBBETTS J, AZENKENG A

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H