国家/地区 中国（12）
IPC部 C（12）
IPC大类 C01（12） H01（12） B82（5）
C23（3）
IPC小类 C01B（12）
IPC H01L021/02（12）
发明人 DENG P（7） GUO H（7） LEI T（7）
ZHANG K（7） ZHANG Y（7） ZHANG F（5）
公开年 2012（11）
申请年 2012（12）
专利权人 UNIV XIDIAN（7）

Epitaxial structure used in light emitting device e.g. LED based on group III-V nitride semiconductor e.g. gallium nitride, comprises substrate, epitaxial layer disposed on substrate, and graphene layer disposed between substrate and layer.

WEI Y, FAN S

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Making graphene nanoribbon comprises contacting poly(phenylene ethynylene) polymer, annulating compound, and catalyst system comprising metal catalyst and protic acid, and oxidizing the arylannulated polymer product.

DICHTEL W R, ARSLAN H, URIBEROMO F J

Preparing structured graphene, comprises cleaning silicon substrate and vacuumizing, introducing propane into the substrate to carbonize, performing heteroepitaxial growth, and cooling the epitaxial cubic silicon carbide film.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Graphene heterostructure used for electronic components used in electronic circuits, and for electronic devices, consists of graphene layer positioned between two encapsulation layers.

GEIM A K, NOVOSOLEV K S, GORBACHEV R V, PONOMARENKO L A, GEIM A, NOVOSELOV K, GORBACHEV R, PONOMARENKO L, NOVOSELOV K S

Preparation of structured graphene by depositing silicon dioxide layer on silicon carbide wafer surface, scribing graphics window, reacting carbon tetrachloride with naked silicon carbide, putting wafer on copper film, and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structured graphene by depositing silicon dioxide layer on silicon carbide surface, etching pattern window, reacting silicon carbide with chlorine, removing silicon dioxide outside window, putting on copper film and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structural graphene for microelectronic devices, involves growing carbon-silicon carbide thin film and silica layer on substrate, forming nickel film on other sample, placing silica layer on nickel film, and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structured graphene by growing carbonization zone layer on substrate, growing cubic silicon carbide thin film, depositing silicon dioxide, carving graphics window, and reacting exposed cubic silicon carbide film with chlorine.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Method for preparing double-layer structural graphene used for manufacturing microelectronic device, involves placing generated double-layer carbon film into buffered hydrofluoric acid solution to remove all silicon dioxide of window.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C