国家/地区 美国（16） 韩国（11） 世界知识产权组织（10） 中国（9） 日本（9） 欧洲专利局（EPO）（4） 台湾（4）
IPC部 C（24）
IPC大类 C01（24）
IPC小类 C01B（24）
IPC C01B031/02（24）
发明人 BONG H（2） CHO K（2） CHOI M（2）
FAN S（2） JIANG K（2） JUNG M（2）
LIN X（2） LIU P（2） MOON J（2）
公开年 2015（14） 2014（6） 2016（4）
申请年 2014（24）
专利权人 CENT ADVANCE.（2） FAN S（2） HON HAI PREC.（2） HONGFUJIN PR.（2）
JIANG K（2） LG ELECTRONI.（2） LIN X（2） LIU P（2）
UNIV TSINGHU.（2）

Graphene nano tape for use in electronic device, has inner walls that are provided with tape-shaped portion which is adjoined or attached for covering full length.

KAMISHIMA M, WATANABE H, NAGAMUNE T, KATADA A

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Producing single or multi layered graphene-containing carbon structures on a surface of grains of copper powder and/or its alloy comprises e.g. mixing copper or its alloy powder and inert powder, and annealing at a fluidized temperature.

BABUL T, OBUCHOWICZ Z, KOWALSKI S, BLASZCZYK J

Carbon fiber film comprises carbon nanotube film containing carbon nanotubes joined end to end and extending along a same direction in which each carbon nanotube is joined with graphene sheets.

JIANG K, WANG J, FAN S, LIN X, LIU P

Manufacture of carbon nanotube composite wire, involves providing carbon nanotube array, drawing carbon nanotube film from carbon nanotube array using tool, and treating carbon nanotube film using graphene solution.

LIN X, WEI H, LIU P, ZHANG L, JIANG K, FAN S

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Manufacturing graphene, comprises manufacturing superimposed body by overlapping the stacked thin film made of a metal catalyst layer; and preparing graphene on a metal catalyst layer by performing a chemical vapor deposition.

CHO K, BONG H

Production of doped graphene pattern during manufacture of pn-diode, involves supplying n-type carbon precursor on substrate, forming amorphous carbon pattern by irradiating electron beam or ion beam to precursor and heat-treating.

BAE D J, KIM K S, LEE I B

Direct method of growing patterned graphene involves forming mask layer having hole exposing site in which graphene is formed, on substrate, forming catalytic metal layer on mask layer, and forming graphene on catalytic metal layer.

PARK S J, KWON H J, KANG J W, KIM N Y

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y