国家/地区 中国（7） 美国（7） 世界知识产权组织（6） 韩国（5） 台湾（5） 日本（4） 欧洲专利局（EPO）（3） 德国（2） 英国（2）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C23C016/56（10）
发明人 GLASS H（2） GUINEY I（2） THOMAS S（2）
TYLER M（2） WALLIS R（2）
公开年 2021（10）
申请年 2020（5）  2021（4） 
专利权人 PARAGRAF LTD（2）

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Formation of graphene layer used as material in e.g. flexible technologies, involves forming polymer layer on catalytic substrate by chemical vapor deposition of graphene precursor, and raising temperature to induce cyclodehydrogenation.

SINITSKII A, TORRES A, LI G

Preparing neodymium-graphene composite material used as electrode material in electrolytic water hydrogen production device or as cathode material in fuel cell or metal-air battery, comprises preparing neodymium simple substance on graphene.

SA G, CHEN L, LIANG T, DENG Y, SAGAR R U R

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Core-shell structure useful in anode material for secondary batteries comprises metal core, and shell which is graphene.

CHOI H Y, PARK J W, EUGENE L, DOH C H, BAE Y

Preparing graphene film useful in thin film transistor comprises preparing graded porous silica film filled with metal catalyst, depositing graphene on surface of graded porous silicon dioxide film and removing graded porous silica film.

XIA Y, ZHUO E, YU S

Producing polymer-coated graphene layer structure involves e.g. adding substrate to reaction chamber, supplying flow comprising precursor compound to form graphene layer structure, heating and spin-coating using polymer or polymer precursor.

GLASS H, GUINEY I, TYLER M, WALLIS R, THOMAS S, TAYLOR M

Production of electronic device such as integrated circuit board, involves providing substrate, supplying flow comprising precursor compound, selectively laser ablating graphene, and selectively laser ablating surface of substrate.

GLASS H, GUINEY I, TYLER M, WALLIS R, BAINES R, THOMAS S