国家/地区 台湾（31）
IPC部 C（31）
IPC大类 C01（31）
IPC小类 C01B（31）
IPC C01B031/02（31）
发明人 FAN S（8） JIANG K（7） LIN X（7）
FAN F Y（6） CHIBA Y（5） XIAO L（5）
CHIBA G（4） LIN X Y（4） VEERASAMY V（4）
VEERASAMY V S（4） CHIBA YOSHIHIRO（3） YOSHIHIRO C（3）
LIU P（2） WANG J（2）
公开年 2012（8） 2013（8） 2011（5） 2015（5） 2016（2）
申请年 2012（8）  2011（7）  2009（4）  2014（4）  2013（3）  2010（2）  2015（2） 
专利权人 HON HAI PREC.（8） HONGFUJIN PR.（8） UNIV TSINGHU.（8） JX NIPPON MI.（6）
NIPPON MININ.（6） GUARDIAN GLA.（4） GUARDIAN IND（4） GUARDIAN IND.（4）
NIPPON MININ.（4） FAN S（3） JIANG K（2） LIN X（2）
LIU P（2） NIPPON MININ.（2） VEERASAMY V .（2） WANG J（2）

Composite structure of graphene and carbon nanotube configured in a three-dimensional form used in electrodes, comprises graphene platelets, metal particles coated on graphene platelets, and carbon nanotubes formed on metal particles.

WU M Y, HSIEH C, PENG C, WU Y, XIE C, HSIEH C Y, PENG C S

Carbon fiber film comprises carbon nanotube film containing carbon nanotubes joined end to end and extending along a same direction in which each carbon nanotube is joined with graphene sheets.

JIANG K, WANG J, FAN S, LIN X, LIU P

Manufacture of carbon nanotube composite wire, involves providing carbon nanotube array, drawing carbon nanotube film from carbon nanotube array using tool, and treating carbon nanotube film using graphene solution.

LIN X, WEI H, LIU P, ZHANG L, JIANG K, FAN S

Manufacturing graphene film involves providing substrate, distributing graphene slurry on substrate, causing graphene slurry to distribute on substrate, and treating graphene slurry with atmosphere pressure plasma jet.

CHENG I, CHEN J, HSU C, CHOU P, LIU H, CHANG H, LIANG S, WU T, CHENG I C, CHEN J Z, HSU C C, CHOU P T, LIU H W, LIANG S P, WU T J

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Manufacture of graphene film used for e.g. semiconductor, involves arranging substrate, providing metallic catalytic material and reducing gas, raising temperature, providing carbon-containing gas, and generating carbon atoms.

YEN W, CHUEH Y, YEN W C, CHUEH Y L

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Rolled copper foil used for manufacture of graphene for e.g. mercury-free fluorescent lamp, has specified ratio of maximum value for detection strengths occurring under specified conditions based on specific direct pole figure.

CHIBA YOSHIHIRO, CHIBA Y

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A