国家/地区 欧洲专利局（EPO）（9）
IPC部 C（9）
IPC大类 C01（9） H01（9） B01（2）
C23（2）
IPC小类 C01B（9）
IPC H01L021/02（4） C01B032/186（3） H01L021/768（3）
C23C016/02（2） C23C016/26（2） C23C016/511（2）
H01L023/532（2） H01L029/16（2） H01M004/36（2）
H01M004/38（2） H01M004/62（2） H01M010/052（2）
发明人 LEE C（9）
公开年 2022（3） 2020（2） 2023（2）
申请年 2021（3）  2022（2） 
专利权人 SAMSUNG ELEC.（6） LG ENERGY SO.（2）

Process of producing cathode electrocatalyst for metal-air batteries, involves providing carbon source suspension that includes an inorganic carbon source, metal source solution including a metal source, and nitrogen source solution including a nitrogen source.

LEE C, PAN C, KUO Y, LEE C I, PAN C J, GUO Y S

Positive electrode for lithium-sulfur battery, comprises positive electrode current collector and positive electrode active material layer positioned on at least one surface of positive electrode current collector.

KANG D Y, YANG S, LEE C, SONG M, MYUNGJUN S, LI C, KANG D

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Black phosphorus-two dimensional material complex for electronic device, includes first and second two-dimensional material layers being configured to be coupled to each other by van der Waals force, and black phosphorus sheet in which phosphorus atoms are covalently bonded.

YOON S, LEE C, HWANG H, SHIN H, SEOL M, SUK S H, SHIN H J, HWANGHYUNTAE, LEE C S, YUNE S I, YIN S, LI C, SHEN X

Porous carbon material of core-shell structure used in sulfur-carbon composite used in lithium secondary battery, comprises core comprising stack structure of carbon sheets and carbon-containing shell surrounding core.

JEONG Y, SOHN K, LEE C, JUNG Y C, LI C, SUN Q

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Interconnect structure for use in electronic device, has cap layer provided on surface of conductive wiring and which includes nanocrystalline graphene comprising nano-sized crystals.

BYUN K, SHIN K, KIM Y, SHIN H, SONG H, LEE C, KIM C, CHO Y, BIAN Q, SHEN J, JIN Y, SHEN X, SONG X, LI C, JIN C, ZHAO L, BYUN K E, SHIN K W, HUN K Y, SHIN H J, SONG H J, LEE C S, CHO Y C

Wiring structure for electronic device comprises conductive material layer and nanocrystalline graphene layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, LEE C S, SHIN H J, PARK S J, IM D H, SHIN K W, LEE J M, LIM H J, PIAO X

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R