国家/地区 美国（23）
IPC部 C（23）
IPC大类 C01（23） B82（14） C23（12）
H01（11） C30（10） B32（4）
B01（3） B81（2） C03（2）
G03（2）
IPC小类 C01B（23）
IPC C01B032/188（23）
发明人 SHIN H（3） SHIN H J（3） BYUN K（2）
BYUN K E（2） CIOCHON P（2） FAN S（2）
JIN Y（2） KOLODZIEJ J（2） LEE C（2）
LEE C S（2） LI Q（2） SHIN K（2）
SHIN K W（2） VEERASAMY V（2） VEERASAMY V S（2）
公开年 2021（5） 2011（4） 2012（3） 2015（3） 2022（3） 2023（2）
申请年 2020（6）  2011（3）  2012（3）  2022（3）  2009（2） 
专利权人 SAMSUNG ELEC.（3） GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2）
HON HAI PREC.（2） UNIV JAGIELL.（2） UNIV SUNGKYU.（2） UNIV TSINGHU.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Repairing layers of laminate stack or printed circuit board, comprises providing layered structure, identifying fault location in outer graphene layer, preparing surface of outer graphene layer, and applying localized heat on fault location.

MENTOVICH E, ATIAS B, NAVEH D, LEVI A, SMOLINSKY E Z B

Preparation of graphene involves growing graphene film on growth substrate, setting viscose layer on surface of graphene film, removing growth substrate and using water or cleaning organic solvent, and etching away from surface film.

FAN S, LI Q, JIN Y, ZHANG L, ZHANG T

Preparing graphene nanoribbon composite structure, comprises e.g. providing substrate comprising protrusions arranged at intervals, growing graphene film on growth substrate, and setting adhesive layer on surface of graphene film.

ZHANG T, ZHANG L, JIN Y, LI Q, FAN S

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Obtaining a silicon carbide (SiC)-graphene surface composite with controlled surface morphology for use in e.g., electronics by subjecting SiC substrate, after initial preparation, to annealing in beam of silicon atoms and cooling.

CIOCHON P, KOLODZIEJ J

Composition used in flexible near infrared photodetector, comprises nanowire.

IYER S, NALAMATI S R K, LI J

Production of electronic device such as integrated circuit board, involves providing substrate, supplying flow comprising precursor compound, selectively laser ablating graphene, and selectively laser ablating surface of substrate.

GLASS H, GUINEY I, TYLER M, WALLIS R, BAINES R, THOMAS S