国家/地区 中国（6） 日本（3） 韩国（3） 美国（3） 欧洲专利局（EPO）（2）
IPC部 C（15）
IPC大类 C01（15） G01（9） H01（5）
B82（3） G02（3） B01（2）
C23（2） G03（2） G06（2）
IPC小类 C01B（15）
IPC C01B032/186（15）
发明人 KIM J（2） REN G（2） WANG X（2）
公开年 2021（7） 2022（7）
申请年 2021（15）
专利权人

Method for fabricating two-dimensional channel transistor involves growing hexagonal-boron nitride layer on substrate, selectively etching hexagonal-boron nitride layer by exposing hexagonal-boron nitride layer to sulfur hexafluoride plasma gas, and treating etched layer in potassium hydroxide.

SHRIVASTAVA M, RAWAT J S, MEERSHA A

Visualizing distribution and intrinsic orientation of periodically spaced one-dimensional structures by depositing electrically conductive solid film of imaging material onto surface of two-dimensional material, providing polarization microscope, and imaging layered composite at acquisition angles.

AMADO E, KRESSLER J

Optical element comprises substrate, multilayer graphene provided on substrate, electrode connected to multilayer graphene, and another electrode connected to multilayer graphene.

KONDO O

Strain engineered material for valley splitter device, comprises graphene sheet having array of wrinkles induced by deformations in graphene sheet, where deformations are formed by lattice of underlying nanostructures on substrate, periodically varying field distribution has field magnitude minima.

TEAGUE M L, WANG J, HSU C, YEH N

Sensor useful e.g. in system for detecting ammonia gas, comprises graphene sheet positioned on substrate, and tin oxide nanoparticles and nickel oxide nanoparticles doped on graphene sheet.

LEE K B, NAM Y, LEE S Y, LEE Y, KIM J, OH I H

Manufacturing graphene wrinkles using three-dimensional structure patterning process comprises etching transition metal thin film to form three-dimensional pattern and inserting into chemical vapor deposition chamber to synthesize graphene.

KIM J, WIMALANANDA M D S, LEE J M

Creating nanopore on membrane, fabricating nanopores on membrane for use in two-dimensional membrane, involves fabricating mask with nano-tunnel, placing mask over membrane, bombarding mask with ions, and bombarding membrane with ions passing through nanotunnel.

SHAO L

Manufacturing standard leak holes based on graphene membrane prepared by transfer-free technology comprises using acetone, isopropyl alcohol and acetic acid to remove oxides and other contaminants on surface of copper foil, etching copper foil, and clamping and packaging copper foil.

MENG D, REN G, SUN L, CAO Q, ZHANG J, LIN H, WANG X

Method for measuring thickness of graphene layer directly grown on silicon substrate by using X-ray photoelectron spectroscopy (XPS), involves obtaining effective attenuation length from linear relationship between measurement results by transmission electron microscope and XPS.

LEE E K, CHO Y J, KIM S W, BYUN K, SONG H J, SHIN H J

Preparation method of a graphene-CMOS monolithic integrated detector chip, involves depositing isolation layer on surface of CMOS integrated circuit, and etching through hole in isolation layer to fill metal.

CHEN H, HUANG Y, ZHANG H, CHENG C, CHEN R, HUANG B