国家/地区 韩国（9） 美国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 C（9）
IPC大类 C01（9） G03（6） B01（4）
H01（3） C08（2） C23（2）
G02（2）
IPC小类 C01B（9）
IPC G03F001/62（6） C01B032/182（5） C01B032/184（5）
G03F001/22（5） C01B031/04（3） C01B032/194（3）
C08L069/00（2） C23C016/455（2） G02F001/155（2）
G03F001/64（2） G03F007/20（2） H01B005/14（2）
发明人 KIM H K（6） KIM H Y（5） MI K H（5）
KIMHYUNGKEUN（4） JOJINWOO（3） KIM H（3）
KIM H M（3） KIM S G（3） KIM S K（3）
CHO J W（2） HAN S H（2） JEONJUNHYUCK（2）
KIM Y K（2） LEE G H（2） LEE S J（2）
公开年 2017（3） 2021（3） 2022（2）
申请年 2020（3）  2017（2）  2021（2） 
专利权人 KOREA ELECTRONICS TECHNOLOGY INST（9）

Pellicle used for exposure to extreme UV rays, comprises substrate having opening formed in central portion, etch stop layer formed on substrate to cover opening, and nanoporous graphene layer in which nanopores are formed on graphene layer, provided on etch stop layer.

KIMHYUNGKEUN, MI K H, KIM S K, JOJINWOO, KIM H Y

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Preparing pellicle for extreme UV exposure with graphene defect healing layer, involves forming support layer of silicon nitride material on silicon substrate, and forming core layer of graphene material on support layer.

KIMHYUNGKEUN, MI K H, LEE W S, YANG H S, JOJINWOO, KIM B, JEONJUNHYUCK, LEE G H, KIM H Y, JEON J H, KIM S G, CHO J W, KIM H M, KIM H K

Manufacturing graphene-metal composite pellicle containing graphene by forming metal catalyst layer on silicon substrate, forming core layer by growing graphene, forming protective layer, forming heat dissipation layer and forming pellicle frame composed of silicon substrate-metal catalyst layer.

KIM H, LEE G, KIMHYUNGKEUN

Directly growing multilayer graphene used in a pellicle for extreme ultraviolet lithography, involves forming small-layer graphene on SiN substrate, forming metal catalyst layer on small-layer graphene, and forming an amorphous carbon layer.

KIMHYUNGKEUN, MI K H, KIM H Y, LEE G H, SUNG K H, KIM H M, KIM S G, KIM H K

Graphene composite electrode used for manufacturing electrochromic device, consists of graphene layer, atomic layer formed on graphene layer, and transparent conductive layer formed on atomic layer.

KIM H K, KIM Y K, HAN S H, LEE S J, SEO J W

Manufacture of electrochromic device used as e.g. smart window, involves growing graphene on substrate, performing atomic layer deposition process on graphene layer, forming atomic layer, and forming conductive layer on atomic layer.

KIM H K, KIM Y K, HAN S H, LEE S J, SEO J W

Non-destructive inspecting graphene, comprises applying a reactive gas on a surface of a metal substrate on which graphene is synthesized, and detecting oxidized region of the metal substrate by the reactive gas.

KIM H K, KIM Y N