国家/地区 世界知识产权组织（50）
IPC部 C（50）
IPC大类 C01（50）
IPC小类 C01B（50）
IPC C23C016/02（50）
发明人 MATSUMOTO T（4） DING G（3） DIXON S（3）
GUINEY I（3） JIANG M（3） TANG S（3）
XIE X（3） BADCOCK T J（2） CHOI K（2）
COJOCARU C（2） DATSKOS P G（2） DENG P（2）
GUO H（2） IVANOV I N（2） KIM H K（2）
公开年 2013（9） 2021（8） 2012（6） 2014（5） 2017（5） 2022（5） 2015（4） 2018（2） 2023（2）
申请年 2013（8）  2012（6）  2014（6）  2020（6）  2011（5）  2017（5）  2022（5）  2021（4）  2016（2） 
专利权人 TOKYO ELECTR.（4） CHINESE ACAD.（3） PARAGRAF LTD（3） SHANGHAI INS.（3）
CENT NAT REC.（2） DENG P（2） ECOLE POLYTE.（2） GUO H（2）
HEIQ MATERIA.（2） KOREA ELECTR.（2） LAM RES CORP（2） LEI T（2）
UNIV CALIFOR.（2） UNIV NANYANG.（2） UNIV XIDIAN（2） UTBATTELLE L.（2）
ZHANG K（2） ZHANG Y（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Forming graphene layer structure, comprises providing growth substrate having growth surface, and forming graphene layer on growth surface by chemical vapor deposition, where growth surface is formed of material e.g. yttrium-stabilized zirconia.

DIXON S, GUINEY I, THOMAS S, GRIFFIN R M, BADCOCK T J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Lithium or sodium-based battery used for e.g. portable electronic device, comprises anode at least partially covered on its side facing electrolyte by at least one artificial solid-electrolyte interphase layer with layer(s) of porous graphene with pores having preset average characteristic width.

CHOI K, HEIGHT M J

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Manufacture of steel strip for battery case, involves performing continuous roll-to-roll process by joining leading edge of coil of nickel-plated steel strip to trailing edge of preceding coil of nickel-plated steel strip in joining section.

WITTEBROOD A J

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K