国家/地区 世界知识产权组织（94）
IPC部 C（94）
IPC大类 C01（94）
IPC小类 C01B（94）
IPC C23C016/26（94）
发明人 MATSUMOTO T（8） IFUKU R（7） WADA M（5）
GUINEY I（4） TAKASHI M（4） THOMAS S（4）
GUO S（3） HONG B（3） HONG B H（3）
KABUKI N（3） KIM Y K（3） OZKAN C S（3）
OZKAN M（3） RYOTA I（3） SUGIURA M（3）
公开年 2012（15） 2015（12） 2021（11） 2022（11） 2013（8） 2017（8） 2014（7） 2016（7） 2011（5） 2020（4） 2023（3） 2009（2）
申请年 2013（11）  2021（11）  2012（10）  2011（9）  2014（9）  2015（9）  2022（7）  2016（6）  2020（6）  2019（5）  2010（4）  2017（4）  2009（3） 
专利权人 TOKYO ELECTR.（10） APPLIED MATE.（4） PARAGRAF LTD（4） UNIV CALIFOR.（4）
CALIFORNIA I.（3） EMPIRE TECHN.（3） HANWHA TECHW.（3） BASF SE（2）
CORNING INC（2） DAEJOO ELECT.（2） GRAPHENE SQU.（2） GUO S（2）
HANWHA AEROS.（2） ISLAND GIANT.（2） KOREA ADV IN.（2） LAM RES CORP（2）
MAX PLANCK G.（2） OZKAN C S（2） OZKAN M（2） SAMSUNG TECH.（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Producing coated nano-ordered carbon particles used in anode within rechargeable battery including sodium-ion batteries and other metal-ion batteries, involve exposing carbon-containing material to expanding agent to produce expanded carbonaceous particles during expanding process.

ENTERKIN J A, WORFOLK B J, ZHANG L

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Manufacture of steel strip for battery case, involves performing continuous roll-to-roll process by joining leading edge of coil of nickel-plated steel strip to trailing edge of preceding coil of nickel-plated steel strip in joining section.

WITTEBROOD A J

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S