国家/地区 日本（18）
IPC部 C（18）
IPC大类 C01（18）
IPC小类 C01B（18）
IPC C23C014/06（18）
发明人 JIANG M（2） MATSUMOTO T（2） TANG S（2）
WANG H（2） XIE H（2） XIE X（2）
公开年 2013（4） 2015（4） 2017（3） 2016（2） 2018（2）
申请年 2015（4）  2013（3）  2014（3）  2011（2） 
专利权人 FUJITSU LTD（2） SHANGHAI INS.（2） TOKYO ELECTR.（2）

Graphene quantum dot apparatus for e.g., photoelectric conversion device, has substrate and graphene quantum dots on substrate, with each quantum dot having armchair-type first edge parallel to first direction and armchair-type second edge.

YAMAGUCHI J

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z

Manufacture of graphene substrate involves laminating layer comprising catalytic metal, laminating layer on surface side of above layer, heat treating obtained layer, and cooling to form graphene between substrate and layer.

NARUTSUKA S, YAMADA J

Manufacture of graphene for fabrication of electronic device, involves adsorbing molecule having six-membered ring structure onto surface of substrate, and irradiating surface using beam of molecules containing carbon atoms.

MATSUMOTO T

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L

Tire includes cover film made entirely of graphite or graphene deposited on inner surface of rubber inner layer that faces inner cavity of carcass.

FORTE G, FIORENZA P, PEZZULLO G