国家/地区 美国（46）
IPC部 C（46）
IPC大类 C01（46）
IPC小类 C01B（46）
IPC C01B031/04（38） C23C016/26（33） C01B031/02（24）
B82Y040/00（18） B82Y030/00（17） C01B032/186（11）
C23C016/02（8） C23C016/44（6） C23C016/455（6）
C23C016/46（6） H01G011/36（6） H01L021/02（6）
C23C016/56（5） H01L029/16（5） B32B009/00（4）
发明人 GUO S（3） LEE J（3） OZKAN C S（3）
OZKAN M（3） CHOI J（2） MARTENS R I（2）
SHIN H（2） VAN RIJN R（2） WANG W（2）
WANG Y（2）
公开年 2014（21） 2013（16） 2015（9）
申请年 2013（46）
专利权人 SAMSUNG ELEC.（4） UNIV CALIFOR.（4） GUO S（2） KOREA ADVANC.（2）
OZKAN C S（2） OZKAN M（2） RIJKSUNIV LE.（2） SHENZHEN CHI.（2）
TE CONNECTIV.（2） TYCO ELECTRO.（2） UNIV OHIO（2） UNIV OHIO ST.（2）
UNIV SINGAPO.（2） UNIV SUNGKYU.（2） WANG W（2） WANG Y（2）

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Producing patterned graphene comprises irradiating focal point on metal substrate surface with laser beam in the presence of carbon dioxide and moving the beam relative to surface so that focal point is displaced along the pattern.

ZHAO C, DONG J, DONG X, QIAN X

Producing graphene layer from liquid metal matrix on solid metal or ceramic substrate of multilayered plate containing e.g. graphene forming matrix, comprises heating, annealing and supplying acetylene, ethylene and hydrogen and cooling.

MODRZYK W, KULA P, RZEPKOWSKI A, PIETRASIK R, ATRASZKIEWICZ R, DYBOWSKI K

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Fabrication method for three-dimensional graphene nanoribbon involves removing strip of graphene layer and metal coating to expose side surface of insert while leaving line of graphene on metal winding around insert.

WILLIAMS D, SCHWARTZ R

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Manufacturing graphene layer by performing sputtering process to form graphite layer on substrate, and performing lithography process on graphite layer for thinning graphite layer and making graphite layer thinned to become graphene layer.

HUANG C, CHIU S, CHUNG C, WU B, HUANG J, QIU S, ZHONG C, HUANG C H, CHIU S M, CHUNG C J, WU B H