国家/地区 中国（38） 美国（18） 韩国（14） 世界知识产权组织（12） 欧洲专利局（EPO）（6） 日本（6） 台湾（5） 德国（2）
IPC部 C（59）
IPC大类 C01（59）
IPC小类 C01B（59）
IPC C23C016/26（25） C01B032/184（19） C01B032/182（17）
C01B032/186（17） C01B032/194（15） B82Y030/00（9）
B82Y040/00（9） C23C014/18（9） C23C014/06（8）
C01B031/04（6） C23C014/35（6） C23C016/02（6）
C01B032/198（5） C23C016/44（5） C23C014/30（4）
发明人 LI Y（4） LIU P（4） GAO C（3）
LI X（3） LIN Y（3） LIU Y（3）
WANG F（3） ZHANG Y（3） CHEN J（2）
CHEN X（2） CHU K（2） DONG Y（2）
GUO Y（2） HE D（2） HUANG D（2）
公开年 2018（59）
申请年 2017（30）  2018（21）  2016（8） 
专利权人 UNIV XIAN TE.（3） UNIV ZHEJIAN.（3） CHENZHOU BOT.（2） HANGZHOU GAO.（2）
TOKYO ELECTR.（2） UNIV LANZHOU.（2）

Synthesis of electric wire involves adding methyl viologen, graphene oxide and silver nitrate to ethanol solution and then mixing, stirring mixture and then heating, pressing mixture and hot extruding.

WANG L

Synthesis of graphene for optoelectronic devices, involves placing copper-nickel thin film laminate in chemical vapor deposition, bringing graphene precursor into contact with thin film laminate, and performing chemical vapor deposition.

CHO K, YOO M S, LEE H C, CHO K W

Preparing graphene-based ultrathin composite membrane comprises e.g. preparing graphene oxide solution, and suction filtering by using AAO as substrate to obtain oxidized graphite alkene substrate film.

GAO C, PENG L, LIU Y, GUO Y

Method for manufacturing graphene, involves forming graphene layer on graphene growth substrate, and forming pattern for formation of graphene on graphene growth substrate.

KIM H K, KIM H

Preparation of three-dimensional graphene/copper composite material involves weighing graphene oxide dispersion liquid, placing in PTFE mold and freeze-drying, placing alloy in graphene foam and performing pressureless infiltration.

CHU K, WANG F, WEI X, GENG Z, HUANG D, LI Y

Preparing independent self-supporting graphene-based ultra-thin film comprises e.g. preparing graphene oxide solution, filtering, compounding, pressing anodic aluminum oxide, making graphene-based ultra-thin film flat, and freeze-drying.

GAO C, PENG L, LIU Y, GUO Y

Preparing graphene/metal composite material useful for high speed train insulated gate bipolar transistor packaging comprises e.g. preparing graphene oxide dispersion, coating layer of metal boron and titanium on surface of graphene film.

CHU K, WANG F, HUANG D, LI Y

Method for producing graphene, involves placing substrate in vacuum chamber, and heating graphite to sublimation under vacuum and depositing graphite on substrate after sublimation.

WANG W

Preparation of anatase-type flower-shaped diamond titanium dioxide/graphene composite material for photocathode, involves stirring titanium tetrachloride solution and graphene oxide dispersion liquid, heating, cooling, washing and drying.

YAO C, WANG P, ZUO S, LIU W, LI X

Method for generating graphene film, involves placing substrate for graphene film synthesis inside of quasi-enclosed substrate holder and generating graphene film on substrate through chemical vapor deposition.

BOL A A, LI X