国家/地区 中国（8）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C23C016/26（8）
发明人 BYUN K（2） BYUN K E（2） JIN C（2）
KIM C（2） KIM S（2） LEE C（2）
LEE C S（2） LEE E（2） LI C（2）
LI Y（2） SHEN X（2） SHIN H（2）
SHIN H J（2）
公开年 2021（3）
申请年 2021（2） 
专利权人 SAMSUNG ELEC.（2）

Preparing a sponge nickel-loaded nitrogen and fluorine double-doped vertical graphene useful in e.g. preparing anode and cathode materials for lithium-sulfur batteries, comprises e.g. obtaining Ni(AC)2 aqueous solution, adding N2H4H2O and mixing to obtain reaction solution.

TU J, WANG X, QIU Z, XIA X

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S