国家/地区 中国（22）
IPC部 C（22）
IPC大类 C01（22）
IPC小类 C01B（22）
IPC C01B032/186（17） C23C016/26（15） B22F001/02（3）
B82Y030/00（3） B82Y040/00（3） C01B032/184（3）
C23C016/02（3） C23C016/54（3） H01L021/02（3）
C01B032/182（2） C01B032/19（2） C01B032/194（2）
C22C001/10（2） G01N021/65（2）
发明人 LIU Z（4） LI X（2） LUO J（2）
PENG H（2） ZHANG J（2）
公开年 2020（10） 2019（8） 2021（4）
申请年 2019（22）
专利权人 BEIJING GRAP.（3） UNIV PEKING（3）

Graphene composite metal foil double-side growth device has chemical vapor deposition furnace comprising plasma glow region and heating growth region, and connected with unwinding shaft and winding shaft on both sides.

PENG H, CAO F, YANG H, WANG K, WANG X, LIU Z

Sandwich structure material used for a device comprises intermediate layer comprising two-dimensional materials, and metal layers.

ZHOU J, WANG R, QIU X

Method for preparing graphene wafer in batches using carrier, involves using chemical vapour deposition process to prepare graphene film on substrate, in which angle between gas flow direction and substrate is provided with specified value.

LIU Z, JIANG B, GAO X

Preparing graphene/metal composite powder involves heating carbon-containing free radicals obtained by hot filament cracking to react with metal powder in a fluidized bed, lowering temperature to grow graphene on the fluidized metal powder.

DAI D, YANG K, LIN Z, JIANG N, MA H

Immersion spray etching comprises covering side of graphene-grown substrate with graphene film that needs to be retained with protective film, adding to flowing etching solution to etch substrate to form protective film/graphene.

LI T, LIU H, MAO D, ZHANG J

Fast chemical vapor deposition growth of single-layer graphene on non-metallic substrates comprises e.g. raising non-metallic substrate to growth temperature in non-oxidizing atmosphere, and charging reaction system with carbon source.

MA L, WEI S, REN W, CHENG H

Preparation of nanocomposite heat dissipation film for e.g. electronic devices, involves dispersing fuming sulfuric acid and hydrogen peroxide to form nano-graphene, reacting with absolute ethanol to form dispersion liquid, and drying.

CHEN Q

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Growing graphene on surface of metal powder for obtaining graphene, involves spraying carbon source, metal powder, and protective gas into chemical vapor deposition furnace, where carbon source and metal powder enter high temperature region.

HOU X