国家/地区 韩国（42）
IPC部 C（42）
IPC大类 C01（42）
IPC小类 C01B（42）
IPC C01B031/02（41） C23C016/26（30） B82Y040/00（16）
C01B031/04（15） B82Y030/00（12） H01B001/04（10）
B01J019/08（6） B82B003/00（5） C01B032/186（5）
C23C016/46（5） B32B009/00（4） C23C016/56（4）
B32B037/00（3） B32B043/00（3） H01L021/02（3）
发明人 HONG B H（7） WON D K（6） HONG B（4）
AHN J（3） AHN J H（3） CHO S M（3）
CHOI I S（3） CHOI J（3） CHOI J Y（3）
KIM H（3） LEE K J（3） SHIN H J（3）
WON D（3） WOO Y S（3） YOO J B（3）
公开年 2012（42）
申请年 2011（23）  2012（15）  2010（4） 
专利权人 SAMSUNG TECH.（10） HANWHA TECHW.（8） UNIV SUNGKYU.（6） KOREA ADV IN.（5）
SAMSUNG ELEC.（5） UNIV SUNGKYU.（4） UNIV SUNGKYU.（4） GRAPHENE SQU.（3）
HANWHA AEROS.（2） JX NIPPON MI.（2） KOREA ADVANC.（2） KOREA RES IN.（2）
NIPPON MININ.（2） NIPPON MININ.（2） POSTECH ACAD.（2） UNIV SUNGKYU.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for manufacturing graphene used in solar cell, involves heat-treating deposited mixed thin film on semiconductor substrate at specific temperature for preset time.

CHOI S H, YANG S B, KIM S

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene used for e.g. graphene conducting wire, for semiconductor device e.g. memory, involves controlling electrical characteristics by doping nitrogen to graphene.

LEE S S, JUNG M W, PARK B K, JEONG S J, LEE Y K, CHUNG T M, KIM C G, AN K S, SHIN Y S, JUNG D

Method of growing graphene involves injecting carbon on inorganic substrate, forming graphite catalyst layer on carbon-injected inorganic substrate, forming multilayer board on substrate and growing graphene on multilayer board.

YOON S M, CHOI J Y, WOO Y S, SHIN H J, LEE S K

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Manufacture of graphene sheet involves interconnecting warped surfaces of catalyst substrate, growing graphene on one surface of warped surfaces, and separating bonded substrates.

JIN J, JEON S, LEE Y, HONG Y