国家/地区 美国（13） 世界知识产权组织（8） 欧洲专利局（EPO）（6） 中国（5） 韩国（5） 法国（2） 日本（2）
IPC部 C（16）
IPC大类 C01（16）
IPC小类 C01B（16）
IPC C01B031/04（16）
发明人 KELBER J（2）
公开年 2013（16）
申请年 2012（7）  2013（7）  2011（2） 
专利权人 CENT NAT REC.（2） CNRS CENT NA.（2） KELBER J（2） UNIV NORTH T.（2）

Composition of graphene-based nanomaterials used in e.g. nanostructure and gas sensor, comprises atomic layer of graphene monoxide, where graphene monoxide is crystallographically ordered and configured to form diffraction rings.

CHEN J, GAJDARDZISKAJOSIFOVSKA M, HIRSCHMUGL C, MATTSON E, PU H, WEINERT M

Forming graphene layer on quartz substrate comprises melting portion of quartz substrate, diffusing a form of carbon into the melted portion to form carbon and quartz mixture and precipitating single or few layer graphene out of the mixture.

XU X, WEI D, YE P

Apparatus used for producing graphene comprises seed crystal fixed to support substrate, feedstock injector, laser to selectively generate laser beam, and beam shaping optics to couple laser beam to a portion of seed crystal and feedstock.

HAUCK J P

Growing multilayer graphene film used to form flexible transparent electrode, comprises disposing carbonizing catalyst in reaction chamber, flowing gaseous carbon source/weak oxidizing vapor over catalyst surface, and cooling.

LOH K P, ZHANG K, CASTRO A H, LOH K

Doped high electronic grade graphene thin film for solid-state solar cells, has n-type/p-type dopants made of nitrogen, boron and phosphorus, where film is grown directly or indirectly on metal catalyst thin film with crystal structure.

VEERASAMY V S

Method for producing graphene layer, involves fixing liquid metal on solid substrate or ceramic metal, fixing outer layer of liquid metal or alloy metals at melting point, and forming multi-layer in graphene forming die.

KULA P, RZEPKOWSKI A, PIETRASIK R, ATRASZKIEWICZ R, DYBOWSKI K, MODRZYK W

Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.

GROBERT N, MURDOCK A T, KOOS A A

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C