国家/地区 中国（89）
IPC部 C（89） B（15） H（15）
G（8）
IPC大类 C01（89） C23（19） H01（14）
G01（7） B01（6） B82（6）
C08（4） C04（3） C10（3）
C30（3） B08（2） B22（2）
C02（2） C03（2）
IPC小类 C01B（89）
IPC C01B032/186（89）
发明人 ZHANG B（6） GAO X（5） LI J（5）
LIU Z（5） WANG X（5） LI C（4）
LIU Y（4） WU Q（4） ZHANG J（4）
ZHANG Q（4） ZHANG Y（4） LI H（3）
LI M（3） LI P（3） LI W（3）
公开年 2020（50） 2021（35） 2022（4）
申请年 2020（89）
专利权人 BEIJING GRAP.（6） UNIV PEKING（6） UNIV TIANJIN.（4） SHAANXI XING.（3）
BEIJING GRAP.（2） CHINESE ACAD.（2） GRAHOPE NEW .（2） PARAGRAF LTD（2）
QINGDAO FEIC.（2） SONGSHAN LAK.（2） UNIV CHINA E.（2） UNIV CHONGQI.（2）
UNIV NAT DEF.（2） UNIV SOUTH C.（2） UNIV SOUTHER.（2） UNIV YANGZHO.（2）

Method for manufacturing large-area continuous single-layer graphene film, involves carrying out electrochemical polishing for removing impurities on substrate, and carrying out selective etching under condition of second carbon source flow to obtain large-area continuous single-layer graphene film.

LIU Y, ZHANG J, YAO W, WU B

Negative electrode material useful for sodium-ion battery and lithium-ion battery used in vehicle, comprises graphene film with self-supporting structure.

HUANG H, WU Z

Preparation of graphene involves growing graphene film on growth substrate, setting viscose layer on surface of graphene film, removing growth substrate and using water or cleaning organic solvent, and etching away from surface film.

FAN S, LI Q, JIN Y, ZHANG L, ZHANG T

Preparation method of copper-based graphene, involves removing copper-based graphene precursor from impurities by solvent separation method, and drying copper-based graphene precursor to form copper-based graphene finished product.

WU G, QIAN T, CAO H, MA Y, SHEN H

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Preparation method of graphene-ceramic composite material, involves providing radiating ceramic substrate, introducing carbon source, and performing plasma chemical vapor deposition reaction on radiating ceramic substrate to grow graphene layer.

ZHANG Y, SHAN J, LIU Z

Graphene powder separating device comprises a radiating box and a base, where the inner part of the radiating box is provided with a fixing bridge, and the fixing bridge is fixedly connected with the radiating box.

MENG X

Preparing powdered graphene by passing inert gas into microwave plasma chemical vapor deposition to generate plasma, passing carbon source-nucleation density inhibitor mixed gas into microwave plasma chemical vapor deposition system to perform vapor phase growth and directly collecting graphene.

ZHANG J, SUN Y

Enhancement of third harmonic of graphene material involves preparing graphene film, measuring third harmonic spectrum, coating quantum dot film, and selecting two-photon absorption wavelength to resonate with laser emission wavelength.

LIU K, WU C, HONG H

Hydrogen barrier coating for inner surface of hydrogen storage and transportation device, comprises deposited catalytic metal layer rich in catalytic metal ions formed on surface of substrate.

XIAO S, WU H, ZHOU C, CHEN G, SHI K