国家/地区 中国（30）
IPC部 C（30） B（12） H（8）
G（2）
IPC大类 C01（30） C23（11） B82（9）
H01（8） B01（2） C04（2）
C12（2） C25（2） C30（2）
G01（2）
IPC小类 C01B（30）
IPC C01B032/186（30）
发明人 LU J（3） BI H（2） CHEN L（2）
DAI J（2） DI Z（2） HE J（2）
HUANG F（2） KIM S（2） LI C（2）
LI J（2） LIU C（2） LIU J（2）
LU M（2） LU Y（2） LU Z（2）
公开年 2015（30）
申请年 2015（15）  2014（13）  2013（2） 
专利权人 SHANGHAI INS.（3） SHANGHAI INS.（2） UNIV CALIFOR.（2） UNIV YULIN N.（2）
YULIN TEACHE.（2）

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

New biocompatible interface comprising graphene-related materials (G-biointerface), useful for remote manipulation of electrical properties of cell membrane.

MOLOKANOVA E

Graphene structure for electronic component e.g. transistor, comprises two-dimensional base graphene layer having defect, and linking material formed at defect of base graphene layer.

SUNG M, KIM S, MO S M, KIM S J, CHENG M

Preparing graphene on insulator by placing germanium catalyst substrate in growth chamber, introducing hydrogenous atmosphere to form germanium-hydrogen bond, heating substrate, and performing microwave treatment.

DI Z, JIA P, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J

Preparation of textured graphite for, e.g. sensor, involves placing catalytic substrate in growth chamber, introducing carbon source, heating to grow graphene, and cooling in non-oxidizing protective atmosphere to form graphene surface.

DI Z, WANG G, SHI X, XUE Z, ZHANG M, ZHENG X, DAI J

Preparing graphene thin films comprises processing copper foil blank and growing graphene films on copper foil where processing copper foil blank includes e.g. cleaning copper foil blank plasma, decontaminating and treating with oxide layer.

JIN H, LIU Z, QI X, PENG P, YANG H, ZHANG Z, ZHANG W, ZHANG X, DENG K

High electrical and thermal conductivity flexible three-dimensional graphene material comprises multiple three-dimensional graphene tube, three-dimensional graphene cloth and three-dimensional graphene felt.

BI H, HUANG F, ZHANG Y, YU L

Two-stage growth of high density, high electric conductivity, high heat conductivity graphene material, involves obtaining graphene material by two-stage chemical vapor deposition, and controlling graphene layers.

BI H, HUANG F, HUANG H

Photodiode useful in optoelectronic device, comprises e.g. a silicon quantum dot layer containing silicon quantum dots formed on silicon oxide thin film and a graphene-silicon quantum dot hybrid structure formed on silicon quantum dot layer.

SUK H C, DONG H S, SUNG K, CHOI S H, SHIN D H, KIM S, CHIO S, SHIN D, JIN C, DONGHEE S, SHIGAO C, SUNGKIM

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N