国家/地区 中国（10）
IPC部 C（10）
IPC大类 C04（10） C01（3） C23（2）
IPC小类 C04B（10）
IPC C04B041/50（10）
发明人 GUO H（5） LEI T（5） ZHANG K（5）
ZHANG Y（5） ZHAO Y（4） CHENG H（2）
公开年 2013（6） 2012（4）
申请年 2012（10）
专利权人 UNIV XIDIAN（5）

Manufacture of graphene powder for e.g. photoelectric device, involves decomposing organic substances by fast heating in oxyhydrogen flame, and reconfiguring produced active carbon atoms on insulating substrate or catalyst substrate.

HUANG F, LIN T

Preparation of silicon substrate patterned graphene for semiconductor element, involves growing silicon carbide layer, silica layer, pattern window, and carbon film on substrate, removing silica, coating copper film, and annealing.

GUO H, ZHANG K, ZHANG Y, ZHAO Y, LEI T, ZHANG C

Preparation of patterned graphene material for transistor, by cleaning silicon carbide wafer, coating photoresist layer, placing in buffered hydrofluoric acid solution, carrying out electron beam deposition of nickel film, and patterning.

LEI T, ZHANG Y, TANG X, ZHANG K, ZHAO Y, GUO H

Preparation of rare earth modified graphene ceramic on mono-crystalline silicon piece of composite film includes completely carrying out hydroxylation, hydrolyzing, adding graphene in rare earth sol-gel, and drying.

BAI T

Preparation of graphene used for manufacturing high-mobility graphene transistor comprises growing carbon layer on substrate, growing carbon-silicon carbide layer and performing physical vapor deposition to plate copper film.

GUO H, ZHAO Y, LEI T, ZHANG Y, ZHANG K

Preparation of graphene used for manufacturing high-mobility graphene transistor comprises performing plasma-enhanced chemical vapor deposition to deposit silicon dioxide and performing physical vapor deposition to plate copper film.

ZHANG Y, WEI C, LEI T, ZHANG K, GUO H, ZHAO Y

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparing graphene composite film on silicon wafer surface comprises silicon wafer surface assembled with amino silane film, soaking in graphene oxide suspension, and drying and heating film to obtain the reduced graphene composite film.

CHENG H, CHENG X, LEI Z, SHU D, WANG C

Manufacture of graphite alkene film and graphene composite carbon film for manufacturing semiconductor thin film, involves spraying precursor solution prepared using graphene dispersion liquid on silicon substrate, drying and heating.

CHEN J, LI J, CHEN L, ZHANG Z, ZHOU J