国家/地区 中国（8） 世界知识产权组织（2）
IPC部 C（8）
IPC大类 C23（8）
IPC小类 C23C（8）
IPC C23C014/06（8）
发明人 ZHANG J（8）
公开年 2016（3） 2021（2）
申请年 2016（3）  2021（2）  2022（2） 
专利权人 UNIV XIDIAN（4） LANZHOU CHEM.（3）

Ultra-coupling bionic strain sensor for flexible electronic device, comprises micro-nano coupling bionic crack array set on flexible substrate, resistance layer is deposited on flexible substrate and micro-nano coupling bionic crack array, and electrode is set on resistance layer.

HAN Z, ZHANG J, CHEN X, SHU S

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J

Preparation of graphene target material used in magnetic control sputtering deposition of low friction carbon film, involves stirring and mixing graphene and ethylene glycol, drying, putting milled copper target base mold, and drying.

ZHANG J, JIA Q, ZHANG B

Construction of ultra-low friction carbon-based composite film on rubber surface involves cleaning substrate, pretreating using high-energy plasma, depositing metal carbide and two-dimensional nanosheets and metal nanoparticles layers.

ZHANG J, QIANG L, ZHANG B, GAO K

Preparing fullerene-like carbon layer/graphene-like boron nitride multilayer composite super-lubricating film involves cleaning ultrasonically substrate in absence of water ethanol and acetone, bombarding argon plasma on substrate.

GAO K, GAO B, ZHANG J, ZHANG B, WANG Y, QIANG L

Growing method of aluminum nitride layer and gallium nitride layer on graphene by magnetic sputtering involves supplying hydrogen to quartz tube furnace containing clean copper tube, cooling and obtaining graphene.

CHEN Z, HAO Y, ZHANG J, LV J

Growing gallium nitride with silicon graphene using magnetron sputtering of aluminum nitride involves using chemical vapor deposition method and growing graphene on metal substrate, obtained product is placing in mixed solution.

CHEN Z, HAO Y, ZHANG J, LV J

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z