国家/地区 中国（10） 美国（7） 韩国（4） 世界知识产权组织（4） 日本（3）
IPC部 C（17）
IPC大类 C23（17）
IPC小类 C23C（17）
IPC C23C014/06（17）
发明人 ZHANG Z（2）
公开年 2017（17）
申请年 2016（7）  2017（6）  2015（4） 
专利权人

Growing of graphene sensor matrix in situ on cemented carbide involves depositing amorphous silicon carbide film on surface of cemented carbide, and growing graphene sensor matrix in situ in cemented carbide surface.

LIU F, REN Y, YU X, ZHANG Z

Preparing stannic oxide composite coating comprises mixing tin dioxide and graphene for isostatic compaction and sintering to obtain grapheme/tin oxide composite ceramic target and controlling magnetic sputtering.

DU Y, WANG G, CUI L

Superconducting graphene coating material comprises titanium alloy-tungsten alloy corrosion-resistant transition layer, and graphene/graphite superconducting layer.

HAN Z, GAO H, WEI K

Manufacture of graphene sheet involves laminating nickel thin film on silicon dioxide film provided on surface of silicon substrate, laminating fullerene thin film on nickel thin film, and annealing resultant laminated structure.

JOONGKEE L, WONCHANG C, HUNGI J, CHAIRUL H, JAEYOUNG W, JIYOUNG K, JOOMAN W, AYOUNG K

Electrochemical polishing method of graphene film, involves taking substrate-to-be-polished as anode and insoluble metal as cathode, and electrolyzing, where electrolyte contains mixed liquid of phosphoric acid and sulfuric acid.

ZHANG Z, CHEN C, YAN J, ZHAO W, XU M, WANG Y, LIU C

Method of manufacturing coating layer structure applied to machine element, involves locating continuous graphene structure layer between metal substrate and coating layer to act as buffer structure between substrate and coating layer.

HUANG Y, HU C, HU Q, HUANG Y C, HU C L

Manufacture of graphene composite film for electric capacitive sensor, involves mixing graphene oxide suspension and zeolite nanocrystals with preset particle size, reducing formed solution, and forming atomized droplets on substrate.

LIN C

Formation of graphene film on substrate e.g. glass, involves depositing graphene on surface of substrate to form graphene crystal layer, depositing graphene oxide layer on layer, and depositing graphene on resulting composite layer.

BI H, HUANG F, LIU X, SONG Z, TANG Y, XIU T

Preparation of graphene on silicon metal-free catalyst comprises taking silicon dioxide sputtering substrate, magnetron sputtering hexagonal boron nitride, chemical vapor depositing, and growing graphene on boron nitride film.

ZHANG L

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z