国家/地区 中国（12） 韩国（3） 日本（2） 美国（2） 世界知识产权组织（2）
IPC部 C（16）
IPC大类 C23（16）
IPC小类 C23C（16）
IPC C23C014/06（16）
发明人 TANG L（2） WANG Y（2）
公开年 2018（16）
申请年 2018（9）  2017（5）  2016（2） 
专利权人

Preparing graphene-based metal composite antistatic film comprises heating the base polymer, extruding, placing copper source into the evaporation chamber, performing chilling deposition and overlapping the three-dimensional graphene.

CHEN Q, ZAN H

Preparing a superconducting graphene coating involves placing workpiece in an ultrasonic cleaning device, followed by ultrasonic degreasing cleaning, pure water ultrasonic cleaning, pure water rinsing, and water removal.

HAN Z, GAO H, WEI K

Preparing graphene/metal composite material useful for high speed train insulated gate bipolar transistor packaging comprises e.g. preparing graphene oxide dispersion, coating layer of metal boron and titanium on surface of graphene film.

CHU K, WANG F, HUANG D, LI Y

Method for producing graphene, involves placing substrate in vacuum chamber, and heating graphite to sublimation under vacuum and depositing graphite on substrate after sublimation.

WANG W

Producing graphene thin film involves coating multiple different metals having different carbon solubilities on upper surface of substrate to form multilayer metal film, and injecting multiple carbon atoms on upper surface of metal film.

KIM J H

Preparing cadmium zinc telluride film (CdZnTe) by directional growth on a graphene substrate comprises washing copper foil, placing in CVD growth chamber, heating, cooling, polishing, annealing, and immersing.

HUANG J, GU Q, ZHOU X, YANG F, ZOU T, TANG K, HUANG H, WANG L

Graphene nanoribbon composite film preparation used in energy storage, liquid crystal device, electronic device or biological material, involves infiltrating graphene sheet into surface of composite film by dispersion solvent.

DENG J, LIN Y, ZOU H

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M

Surface treatment of zero-valent chromium composite involves plating nickel composite film using copper plated semi-finished workpiece and graphene oxide chelated metal ion material, and carrying out vacuum composite chrome plating.

ZHAO T

Preparing copper-doped multilayer graphene involves taking graphite target and copper target as raw materials, and introducing into carbon matrix by co-sputtering by direct current and radio frequency in magnetron sputtering.

TANG L, JI R, XIANG J, GAO S, YUAN S, WEI H, TIE X, LI X, ZUO D, WANG Y, LIN Z, HAN F