国家/地区 中国（11）
IPC部 C（11）
IPC大类 C30（11） C01（7） C23（4）
IPC小类 C30B（11）
IPC C30B029/02（8） C01B031/02（4） C23C016/26（4）
C30B025/02（4） C30B025/18（4） C01B031/04（3）
C30B033/02（2）
发明人 ZHANG Y（11）
公开年 2012（10）
申请年 2012（11）
专利权人 UNIV XIDIAN（10）

Preparing amino modified graphene oxide involves dissolving graphene oxide in solvent, depositing obtained paste on upper surface, fixing electric lead on support material using epoxy resin glue, and drying obtained electrode.

CAO H, LI M, LIU C, ZHANG Y

Manufacture of nickel film-containing graphene nano ribbon involves forming carbon-silicon carbide epitaxial film on carbonized layer formed on silicon substrate, depositing nickel film, annealing and removing nickel film.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of graphene nanoribbon used in manufacture of microelectronic device, involves preparing masking plate by isolation strip and ion-implantation strip, and controlling width of strips, and injecting carbon ions to substrate.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of graphene nanoribbon by growing carbide layer on silicon substrate chip, growing cubic silicon carbide heteroepitaxial film, injecting carbon ions, pyrolyzing to generate carbon film, placing on copper film, and annealing.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of structured graphene at 3C-silicon carbide substrate for preparing microelectronic device, by placing washed silicon substrate in chemical vapor deposition system, vacuumizing, heating, introducing propane, and carbonizing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C, ZHANG F

Preparation of large-area graphene used for sealing gas or liquid, by vacuumizing cleaned silicon substrate in chemical vapor deposition system in presence of hydrogen, carbonizing, introducing propane to form carbide layer, and heating.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Formation of graphene on 3C-silicon carbide substrate involves carbonizing silicon substrate, forming carbon film, carrying out heteroepitaxial film growth, reducing, reacting with carbon tetrachloride, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Manufacture of large-area graphene used for sealing gas and liquid, involves adding hetero-epitaxy film to quartz tube, heating, adding mixed gas of argon and chlorine, generating carbon layer, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y

Preparing graphene based on copper film auxiliary annealing, useful for sealing gas and liquid, comprises cleaning silicon substrate, obtaining 3C-silicon carbide heteroepitaxial film, reacting, annealing, reconstructing and removing film.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y