国家/地区 中国（18） 美国（13） 世界知识产权组织（10） 欧洲专利局（EPO）（4） 韩国（4） 日本（3）
IPC部 C（30）
IPC大类 C30（30） C01（13） C23（11）
B82（8） H01（8） B01（4）
B22（2） B32（2） B81（2）
H05（2）
IPC小类 C30B（30）
IPC C30B029/02（18） C30B025/18（12） C01B031/04（10）
B82Y040/00（7） C23C016/26（7） B82Y030/00（5）
C30B025/02（5） C30B029/60（5） C01B031/02（4）
C01B032/186（3） C30B001/10（3） C30B029/36（3）
C30B029/64（3） H01L021/02（3） B22F001/00（2）
发明人 LI X（3） YU G（3） ZHANG Y（3）
CHEN Z（2） DUAN X（2） LIU Y（2）
MA S（2） MA T（2） PAN G（2）
SUN G（2） SUN L（2） WANG G（2）
ZHANG H（2） ZHANG L（2）
公开年 2015（14） 2014（12） 2016（4）
申请年 2014（30）
专利权人 SHANGHAI INS.（3） DUAN X（2） UNIV BEIJING.（2） UNIV BEIJING.（2）
UNIV SHANDON.（2）

Preparation of graphene, involves mixing inorganic salt with phthalocyanine material uniformly, splitting and separating under protecting gas to obtain highly plane oriented graphene material.

SUN X, WANG Y, DONG G

Manufacturing single crystal graphene wire involves using pure single crystal silicon carbide, and then providing obtained single crystal silicon carbide with electron beam bombardment and laser irradiation.

DUAN X

Method for preparation of epitaxial silicon carbide-graphene composite film, involves pre-treating substrate in chemical vapor deposition chamber, growing silicon carbide epitaxial layer, heating, decomposing and recombining structure.

ZHANG B, ZHANG X, ZHANG Z

Producing single or multi layered graphene-containing carbon structures on a surface of grains of copper powder and/or its alloy comprises e.g. mixing copper or its alloy powder and inert powder, and annealing at a fluidized temperature.

BABUL T, OBUCHOWICZ Z, KOWALSKI S, BLASZCZYK J

Flexible metal substrate device for growing graphene thin film, has reflective plate that is located on outer peripheral side of heater for reflecting heat chamber in inward direction.

CHEN Z, HU B, WU H, WU K, XU W, ZHANG H, ZHANG Y, XI M, YU G

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Preparation of highly crystalline graphene/hexagonal boron nitride with stacked structure comprises forming stack structure of graphene/hexagonal boron nitride, and carrying out heat treatment.

SHI D, WANG D, ZHANG G

Forming graphene single crystal domain on substrate, comprises contacting substrate with passivating gas to create low nucleation site density substrate, and contacting the resultant with working gas at first elevated temperature.

COLOMBO L, RUOFF R S, HAO Y

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y