国家/地区 中国（22） 世界知识产权组织（2）
IPC部 C（22）
IPC大类 C30（22） C23（4） H01（3）
IPC小类 C30B（22）
IPC C30B029/02（16） C30B025/18（13） C30B029/64（7）
C30B025/00（6） C30B029/40（5） C30B001/02（2）
C30B023/02（2） C30B025/16（2） C30B033/02（2）
H01L021/02（2）
发明人 LIU K（9） LIU Z（9） PENG H（8）
ZHANG Z（8） WANG E（7） YU D（7）
XU X（6） SUN L（5） LIN L（4）
SHEN B（4） LI Y（3） LIU H（3）
WANG Y（3） YANG X（3） CAO Y（2）
公开年 2016（4） 2018（3） 2021（3） 2022（3） 2015（2） 2017（2） 2020（2） 2023（2）
申请年 2017（4）  2021（4）  2015（3）  2016（3）  2019（2）  2022（2） 
专利权人 UNIV PEKING（22）

Preparing a metal wafer substrate involves forming metal thin film on the sapphire substrate by magnetron sputtering, and annealing under mixed atmosphere of hydrogen and argon.

PENG H, YANG Y, CAO Y, TANG J, YAN R, DU Y

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Preparing gallium nitride single crystal substrate utilizing edge metal mask technology, comprises e.g. providing gallium nitride epitaxial film with nitrogen lattice polarity without biaxial stress, heating hydride vapor phase epitaxy cavity and trimming gallium nitride single crystal thick film.

ZHANG G, SHEN B, WU J, WANG T, GUO Y, LIU Q, LIU F, WANG X

Preparation method of a large domain graphene single crystal, involves annealing sapphire/metal substrate with oxygen-containing gas and providing growth gas according to mode of increasing proportion gradient of growth gas, and growing on sapphire/metal substrate to obtain graphene single crystal.

LIU Z, PENG H, CAO Y, WANG Y, DU Y, TANG J, YAN R

Controlling grain boundary angle of two-dimensional material, involves providing substrate with specific crystal orientation and growing two-dimensional material by chemical vapor deposition on substrate.

LIN L, SUN L, LIU H, LI Y, LIU Z

Preparing single crystal graphene, comprises preparing single crystal graphene by chemical vapor deposition process, forming graphene nucleus on the substrate, and forming single crystal graphene on basis of graphene core.

WANG Y, LI Y, SUN L, LIU H, LIU Z

Growing single crystal gallium nitride film on arbitrary self-supporting substrate involves nitride deposition on any self-supporting substrate, transferring the two-dimensional material with single crystal hexagonal structure.

YANG X, SHEN B, LIU D, SHEN J, CAI Z, CHEN Z, MA C

Preparing two-dimensional single crystal material lamination with large size and interlayer corner comprises growing first and second two-dimensional single crystal material and introducing inert gas and reducing gas, heating and bonding.

LIU K, LIU C, WANG Q, GONG D, WANG E, YU D

Growing single-crystal graphene using single crystal copper foil with any index surface, by preparing single crystal copper foil, selecting single crystal copper foil as substrate, and growing crystal graphene on single crystal copper foil.

LIU K, ZHANG Z, YU D, WANG E

Growing of graphene single crystals involves growing graphene on substrate by chemical vapor deposition, and introducing oxidizing gas during growth process.

LIU Z, PENG H, CHEN B, SUN L, LI Y, LIU H, WANG Y, CAI A, DING Q, ZHAO Z