国家/地区 美国（24） 世界知识产权组织（18） 韩国（16） 中国（15） 日本（14） 欧洲专利局（EPO）（12） 台湾（3） 西班牙（2） 印度（2）
IPC部 B（28）
IPC大类 C23（28）
IPC小类 C23C（28）
IPC C23C016/26（28）
发明人 WANG H（3） XIE X（3） CASTRO A H（2）
DING G（2） HONG B H（2） XIE H（2）
ZHANG K（2）
公开年 2012（4） 2013（4） 2015（4） 2011（3） 2016（3） 2009（2） 2017（2） 2021（2） 2022（2）
申请年 2012（5）  2013（4）  2011（3）  2016（3）  2008（2）  2009（2）  2014（2）  2015（2）  2021（2） 
专利权人 SHANGHAI INS.（3） DOKURITSU GY.（2） UNIV SINGAPO.（2） ZHANG K（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Long-life guide cylinder comprises e.g. outer layer as pre-oxidized felt insulating felt, middle layer as modified resin formed on inner side wall of outer layer, and inner layer as carbon/carbon composite material formed on inner side wall of middle layer.

BAI Y, QIN X, LIU Y, ZHOU J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E