国家/地区 中国（34） 美国（18） 世界知识产权组织（15） 欧洲专利局（EPO）（10） 韩国（9） 日本（8） 波兰（6） 台湾（3） 法国（2） 印度（2）
IPC部 C（56）
IPC大类 C30（56） C01（26） C23（22）
H01（15） B82（9） B32（3）
B01（2） B05（2） C25（2）
IPC小类 C30B（56）
IPC C30B025/02（56）
发明人 ZHANG Y（9） LEI T（5） LI X（5）
WANG D（5） ZHANG J（5） CHAI Z（4）
DENG P（4） GUO H（4） HAN D（4）
HAO Y（4） NING J（4） YAN Y（4）
ZHANG K（4） WANG H（3） ATRASZKIEWICZ R（2）
公开年 2014（11） 2012（7） 2013（5） 2015（5） 2017（5） 2021（5） 2018（4） 2011（3） 2016（3） 2019（3） 2010（2） 2022（2）
申请年 2012（9）  2013（9）  2016（7）  2014（5）  2011（4）  2015（4）  2017（4）  2021（4）  2020（3）  2010（2）  2019（2） 
专利权人 UNIV XIDIAN（9） CENT NAT REC.（2） CHONGQING GR.（2） ECOLE POLYTE.（2）
GUARDIAN IND.（2） SHANGHAI INS.（2） UNIV FUDAN（2） UNIV SHANDON.（2）
ZHANG Y（2）

Method for rapidly growing double-layer graphene single crystal, by adding catalyst and polished copper foil into two quartz boats, annealing the copper foil in a vacuum atmosphere, passing hydrogen and carbon dioxide into quartz tube, and removing the copper foil from the center of tube furnace.

TANG C, GONG P, SUN Z

Preparing composite dimension carbon atom framework van der Waals homogeneous structure temperature control physical defogging film comprises e.g. preparing powder-shaped carbon nanotube material, spraying cellulose acetate by connecting cellulose acetate solution and obtaining defogging film.

JIANG X, DONG H, TIAN B

Preparation of double-layer torsion angle graphene monocrystalline wafer, by annealing copper-nickel monocrystalline substrate in chemical vapor deposition furnace under gas atmosphere of argon and hydrogen to improve crystal quality, and growing under atmosphere of argon, hydrogen and methane.

XIE X, YU Q, ZHAO Y, ZHANG X

Producing epitaxial structure useful in flexible electronic device comprises providing multilayer graphene layer having through-holes, providing single crystal substrate having graphene layer formed and growing semiconductor structure.

HONG Y, JUNG J S, JUNGJOONSUCK

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Preparing double-layer single crystal graphene, involves placing carbon-containing compound and copper foil in corundum box, introducing argon and hydrogen, increasing flux of hydrogen, annealing copper foil, introducing methane, after growing double-layer single crystal graphene, naturally cooling.

XU X, LIANG Z, ZENG F, WANG R, TANG Z

Making bilayer graphene domain used to make optoelectronic devices, comprises e.g. dissolving decaborane into phenyl methyl ether, and coating obtained decaborane/phenyl methyl ether solution to cleaned metal foil/film layer.

LING D, LIU J, WEI D, ZHANG Q, HE X

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Producing carbon structures containing graphene on surface of spatially shaped metal elements made of copper or its alloys, in chemically active gas working atmosphere containing inert shielding gas, by soaking materials in sealed retort.

BABUL T, OBUCHOWICZ Z, JONCZYK S, BARANOWSKI M, KONDEJ A

Preparing silicon/silicon carbide/graphene material involves pretreating single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming.

TU R, HU Z, ZHANG S, ZHANG L