国家/地区 美国（11） 世界知识产权组织（10） 欧洲专利局（EPO）（7） 韩国（7） 日本（6） 中国（5） 波兰（2） 台湾（2）
IPC部 B（13）
IPC大类 C30（13）
IPC小类 C30B（13）
IPC C30B025/02（13）
发明人 VEERASAMY V S（2）
公开年 2014（3） 2010（2） 2011（2） 2012（2）
申请年 2010（2）  2012（2）  2013（2）  2014（2） 
专利权人 GUARDIAN IND.（2）

Making bilayer graphene domain used to make optoelectronic devices, comprises e.g. dissolving decaborane into phenyl methyl ether, and coating obtained decaborane/phenyl methyl ether solution to cleaned metal foil/film layer.

LING D, LIU J, WEI D, ZHANG Q, HE X

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H

Forming single-crystal grapheme for fabricating e.g. photovoltaic devices involves cleaning and annealing the surface of catalyst, applying carbon source to surface of catalyst, and growing single-crystal graphene on surface of catalyst.

TOUR J M, YAN Z

Method of disposing graphene thin film over target receiving substrate involves hetero-epitaxially growing graphene thin film on catalyst thin film containing a metal and disposing graphene thin film and catalyst thin film.

VEERASAMY V S

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O