国家/地区 中国（12） 美国（7） 世界知识产权组织（5） 韩国（4） 欧洲专利局（EPO）（3） 日本（3）
IPC部 C（16）
IPC大类 C30（16） C23（10） C01（7）
H01（6）
IPC小类 C30B（16）
IPC C30B025/18（16）
发明人 XU X（4） ZHANG Z（3） CHEN X（2）
LI Y（2） LIU K（2） ZHANG J（2）
ZHAO X（2）
公开年 2016（9） 2017（6）
申请年 2016（16）
专利权人 UNIV PEKING（2） UNIV SHANDON.（2）

Synthesis of graphene used in e.g. electronic applications, involves reacting drawn catalytic substrate with precursor gas containing hydrocarbon gas and hydrogen gas to form continuous single crystal graphene.

LIST F A, STEHLE Y Y, VLASSIOUK I V, SMIRNOV S N

Preparing graphene on 6H-4H-silicon carbide metal composite substrate involves polishing 6H-4H-silicon carbide carbon surface, cleaning and cutting, placing in chemical vapor deposition furnace chamber and filling with argon.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Synthesizing reduced nuclei density monocrystalline graphene comprises electrochemical polishing rectangular thin copper sheet in phosphoric acid solution, annealing, introducing methane and hydrogen, and growing graphene.

SUN Z, LIU B

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Composite used for electrode of transistor used in flexible device, consists of single crystal sapphire substrate having dislocation density less than preset value, metal film grown on substrate, and graphene film grown on metal film.

AOTA N, AIDA H

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Direct preparation of graphene/metal or alloy composite material comprises e.g. placing metal or alloy in constant temperature heating area of chemical vapor deposition reaction furnace quartz tube and vacuumizing, inletting protective gas.

FU L, GU J, PANG A, ZHANG X

Preparation of AB-stacked bilayer graphene involves performing chemical deposition on copper foil using solid or liquid hydrocarbon as carbon source, and controlling volatilization of carbon source using inert carrier gas.

WU J, WAN J, SONG L, PAN D, LI Y