国家/地区 中国（9）
IPC部 C（9）
IPC大类 C30（9） H01（3） C23（2）
IPC小类 C30B（9）
IPC C30B025/18（9）
发明人 ZHANG J（2） ZHANG Y（2）
公开年 2017（9）
申请年 2017（4）  2016（3）  2015（2） 
专利权人

Graphene-based LED epitaxial growth method, involves depositing silicon-doped n-type gallium nitride layer, active layer, p-type aluminum gallium nitride layer and magnesium-doped gallium nitride layer on substrate, and cooling.

XU P

Preparing graphene single crystal film comprises laminating copper single-crystal thin film/sapphire, annealing and depositing on single-crystal thin film surface under atmospheric pressure chemical vapor deposition.

PENG H, DENG B, LIU Z

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Growing of gallium nitride based on atomic layer deposition of aluminum nitride comprises e.g. cleaning copper substrate, growing graphene layer, aluminum nitride thin layer by atomic layer deposition process and post processing.

WANG W, LI Z, LONG H, LI M, ZHANG J

Heteroepitaxial diamond comprises heterogeneous substrate, graphene flexible layer used as flexible intermediate layer for growing diamonds on heterogeneous substrate, and diamond layer which is epitaxially grown on diamond layer.

YU W, JIN P, ZHANG Y, WANG Z

Preparing graphene on 6H-4H-silicon carbide metal composite substrate involves polishing 6H-4H-silicon carbide carbon surface, cleaning and cutting, placing in chemical vapor deposition furnace chamber and filling with argon.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Synthesizing reduced nuclei density monocrystalline graphene comprises electrochemical polishing rectangular thin copper sheet in phosphoric acid solution, annealing, introducing methane and hydrogen, and growing graphene.

SUN Z, LIU B

Preparing graphene mercury cadmium telluride composite film material comprises preparing graphene composite film, then transferring graphene composite film in three stages.

LI B

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J