国家/地区 中国（15）
IPC部 C（15）
IPC大类 C30（15） H01（8） C23（4）
IPC小类 C30B（15）
IPC C30B025/18（15）
发明人 WANG X（3） LI Y（2） LIU F（2）
WANG G（2） YANG J（2） ZHANG J（2）
ZHANG X（2）
公开年 2022（10） 2023（5）
申请年 2022（15）
专利权人 SHANGHAI INS.（2） UNIV PEKING（2）

Preparation of single crystal graphene film for forming electronic devices, involves laminating copper foil and base metal foil, heating, performing roll-to-roll monocrystalline graphene film growth on molten copper foil, and growing roll-to-roll single crystal graphene film.

LUO G, WANG G, WANG X, LI J, ZHANG B

Van der Waals epitaxy method of high-quality aluminum gallium nitride materials on amorphous substrate, comprises e.g. transferring and processing first two-dimensional material layer on amorphous substrate, transferring second material layer on processed layer, performing hydrogenation passivation.

LI D, JIANG K, BEN J, ZHANG S, CHEN Y, LYU B, SUN X

Processing wafer level single crystal graphene heterojunction by direct growth method, comprises e.g. pre-processing the polycrystalline metal foil to obtain single crystal metal foil, using the crystal orientation inducing method to grow hexagonal boron nitride single crystal domain.

LI Y, WU B, LIANG S, LI S, ZHANG X, HU P, ZHANG J

Preparing three-dimensional homogeneous epitaxial structure used in preparation of optoelectronic device or electronic device, involves covering two-dimensional material layer on surface of nitride single crystal substrate, and processing one micro nano-scale blind hole on surface of material layer.

YAN Q, WANG G

Preparation of wafer-level self-supporting cadmium-tellurium thin film used in electronic device, involves cleaning two-dimensional material/sapphire substrate, assembling two-dimensional material/sapphire substrate and support by molten metal material, and growing cadmium telluride thin film.

WANG J, WANG X, TANG X, CAO H, BAI W

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Preparing a copper single wafer, comprises e.g. performing oriented growth by taking the seed crystal as nucleation center in the traction process to obtain a single crystal copper rod with determined orientation, and fixing the single crystal copper rod on line cutting support and cutting.

XIAO L, HAN L, ZUO T, GAO Z, RU Y, XUE J

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Preparing gallium nitride single crystal substrate utilizing edge metal mask technology, comprises e.g. providing gallium nitride epitaxial film with nitrogen lattice polarity without biaxial stress, heating hydride vapor phase epitaxy cavity and trimming gallium nitride single crystal thick film.

ZHANG G, SHEN B, WU J, WANG T, GUO Y, LIU Q, LIU F, WANG X