国家/地区 中国（9） 韩国（6） 日本（3） 美国（3） 加拿大（2） 欧洲专利局（EPO）（2） 印度（2） 世界知识产权组织（2）
IPC部 C（13）
IPC大类 C30（13） H01（9） B82（2）
C01（2） C23（2）
IPC小类 C30B（13）
IPC C30B029/38（13）
发明人 FIMLAND B M（2） HWANG S W（2） MUNSHI M（2）
SEONG H K（2） SONE C S（2） WEMAN H（2）
公开年 2021（5） 2012（3） 2023（2）
申请年 2020（4）  2010（3）  2021（2）  2022（2） 
专利权人 CHINESE ACAD.（2） CRAYONANO AS（2） SAMSUNG LED .（2）

Visible-near infrared wide spectrum photoelectric detector is independent device and/or integrated in circuit, and contains flexible substrate, transparent conductive electrode, active layer, p-type ohmic contact layer, upper electrode layer, and silicon nitride passivation layer.

CHEN H, WANG W, DENG Z, LI X, JIA H

Method for preparing micro-nano materials comprise e.g. introducing sacrificial carrier into slurry containing raw materials and auxiliary agents, shaping and drying to form mixture, synthesizing preform to prepare porous body made of micro-nano materials, and performing dispersion operation.

LI Q

Nitride templates based on metal substrates comprises metal substrate, two-dimensional material film, which is located on metal substrate one side, inert material pattern mask layer, nitride epitaxial layer, which is located on inert material pattern mask layer side away from the metal substrate.

ZHANG S, BEN J, JIANG K, LI D, CHEN Y, SUN X

Manufacturing semiconductor by forming mask layer which covers substrate, laminating graphene layer on surface of substrate, and making surface of graphene layer crystal-grow a semiconductor crystal.

NARUTSUKA S

Preparing silicon nitride single crystal involves providing silicon carbide substrate, and disposing multilayer graphene an insertion layer on silicon carbide substrate to obtain graphene/silicon carbide substrate.

WANG Y, XU Y, WANG J, XU K

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Preparing graphene chip fly ash comprises washing fly ash is washed by the wet grinding of the vertical wet mill and supergravity washing machine, purifying, recycling, drying, crushing, opening natural gas tank and mixing.

CHENG L, LIU X, YONG X, LIU H

Preparation of highly crystalline graphene/hexagonal boron nitride with stacked structure comprises forming stack structure of graphene/hexagonal boron nitride, and carrying out heat treatment.

SHI D, WANG D, ZHANG G