国家/地区 中国（17） 美国（4） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 C（20）
IPC大类 C30（20） H01（8） C23（6）
C01（5） B82（3）
IPC小类 C30B（20）
IPC C30B033/02（20）
发明人 CHEN D（2） DENG P（2） DING G（2）
GUO H（2） LEI T（2） LIU K（2）
TANG J（2） WANG E（2） WANG G（2）
XIE X（2） ZHANG K（2） ZHANG Y（2）
ZHANG Z（2）
公开年 2012（4） 2015（3） 2018（2） 2020（2） 2021（2） 2022（2） 2023（2）
申请年 2021（5）  2012（3）  2014（2）  2017（2）  2020（2） 
专利权人 UNIV PEKING（2） UNIV XIDIAN（2）

Preparing wafer-sized gallium oxide film comprises e.g. cleaning gallium metal droplets to remove surface oxide film, placing pure gallium droplet on surface of heated substrate, and roll gallium droplet with extrusion rod coated with viscoelastic or rubbery polymer material on surface.

ZHANG L, TU R, LU P, ZHANG S, LI B

Preparing a metal wafer substrate involves forming metal thin film on the sapphire substrate by magnetron sputtering, and annealing under mixed atmosphere of hydrogen and argon.

PENG H, YANG Y, CAO Y, TANG J, YAN R, DU Y

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Preparing high-quality third-fifth compound substrate used in photoelectronic device, photoelectric integration, ultra-high-speed microelectronic device, involves providing third group metal-organic source mixed precursor.

WANG G, YAN Q

Cathode roller useful in electrolytic copper foil mechanism for preparing electrolytic copper foil, comprises annular base copper foil formed on peripheral wall of roll-shaped main body and is electrically connected to main body, and graphene film formed on surface of copper foil of base material.

WANG E, HE M, YUE X, HUANG Z, DING Z, ZHANG Z, LIU K

Fabrication of graphene used for electrode of e.g. sandwich-style capacitor, involves providing patterned substrate, depositing graphene oxide on patterned substrate, and reducing graphene oxide to graphene.

CHAICHI A, GARTIA M R

Ferromagnetic/graphene/ferromagnetic heteroepitaxial film has graphene layer that is directly epitaxially grown on first heteroferromagnetic layer, and second heteroferromagnetic layer is epitaxially grown on graphene layer.

PAN M, PENG J, HU Y, LI P, QIU W, HU J, CHEN D

Manufacturing substrate material useful for graphene growth, comprises e.g. cutting sapphire crystal, forming sapphire plate blank, grinding sapphire sheet blank to form sapphire sheet semifinished product, and chamfering sapphire sheet.

ZHOU Z, YANG L, SHI M, LI Z

Preparing cadmium zinc telluride film (CdZnTe) by directional growth on a graphene substrate comprises washing copper foil, placing in CVD growth chamber, heating, cooling, polishing, annealing, and immersing.

HUANG J, GU Q, ZHOU X, YANG F, ZOU T, TANG K, HUANG H, WANG L

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P